Role of interface chemistry and growing surface stoichiometry on the generation of stacking faults in ZnSe/GaAs L. H. KuoK. KimuraT. Yao OriginalPaper Pages: 53 - 63
Interface structure in arsenide/phosphide heterostructun grown by gas-source MBE and low-pressure MOVPE A. Y. LewC. H. YanE. T. Yu OriginalPaper Pages: 64 - 69
An empirical relation between the melting point and the direct bandgap of semiconducting compounds B. R. Nag OriginalPaper Pages: 70 - 72
Magnetic and photomagnetic properties of polycrystalline wide-gap semiconductor Cd1-xMnxTe thin films X. -F. HeA. KotlickiP. Lozano-Tovar OriginalPaper Pages: 73 - 77
Study of metal-polymer adhesion—A new technology: Cu plasma PIB G. -R. YangH. ShenT. -M. Lu OriginalPaper Pages: 78 - 82
Interfacial reaction and electrical property of Ge/Ni/ZnSe for blue laser diode Dae-Woo KimJoon Seop KwakSam-Kyu Noh OriginalPaper Pages: 83 - 89
The optimization of the double mask system to minimize the contact resistance of a Ti/Pt/Au contact G. L. WaytenaH. A. HoffJ. S. Suehle OriginalPaper Pages: 90 - 96
Substitutional-interstitial silver diffusion and drift in bulk (cadmium,mercury) telluride: Results and mechanistic implications Igor LyubomirskyVera LyakhovitskayaDavid Cahen OriginalPaper Pages: 97 - 105
Characteristics of PECVD grown tungsten nitride films as diffusion barrier layers for ULSI DRAM applications Byung Lyul ParkDae-Hong KoMoon Yong Lee OriginalPaper Pages: L1 - L5
Accurate determination of the band-offset of a quantum semiconductor structure from its capacitance-voltage profile: Application to an InP/Ga0.47In0.53As/InP single quantum well C. GuillotM. DugayY. Monteil OriginalPaper Pages: L6 - L8