1. Foreword

   • Michael R. Melloch
   • Theodore D. Moustakas

   EditorialNotes Pages: 211 - 211

2. Epitaxial growth of cubic gan on (111) GaAs by metalorganic chemical vapor deposition

   • C. H. Hong
   • K. Wang
   • D. Pavlidis

   OriginalPaper Pages: 213 - 218

3. Native defects and dopants in gan studied through photoluminescence and optically detected magnetic resonance

   • T. A. Kennedy
   • E. R. Glaser
   • D. K. Wickenden

   OriginalPaper Pages: 219 - 223

4. Valence-band discontinuity between GaN and AIN measured by x-ray photoemission spectroscopy

   • G. Martin
   • S. Strite
   • H. Morkoç

   OriginalPaper Pages: 225 - 227

5. Chemically assisted ion beam etching of gallium nitride

   • A. T. Ping
   • C. Youtsey
   • J. N. Kuznia

   OriginalPaper Pages: 229 - 234

6. The effects of N+ dose in implantation into 6h-sic epilayers

   • Tsunenobu Kimoto
   • Akira Itoh
   • Masanori Watanabe

   OriginalPaper Pages: 235 - 240

7. A microstructural comparison of the initial growth of AlN and GaN layers on basal plane sapphire and sic substrates by low pressure metalorganic chemical vapor deposition

   • T. George
   • W. T. Pike
   • P. Chang-Chien

   OriginalPaper Pages: 241 - 247

8. The influence of nitrogen ion energy on the quality of GaN films grown with molecular beam epitaxy

   • T. C. Fu
   • N. Newman
   • E. R. Weber

   OriginalPaper Pages: 249 - 255

9. High-Quality GaN heteroepitaxial films grown by metalorganic chemical vapor deposition

   • K. G. Fertitta
   • A. L. Holmes
   • F. A. Ponce

   OriginalPaper Pages: 257 - 261

10. The growth and properties of mixed group V nitrides

    • J. W. Orton
    • D. E. Lacklison
    • T. L. Tansley

    OriginalPaper Pages: 263 - 268

11. The effect of GaN and ain buffer layers on GaN film properties grown on both C-plane and A-plane sapphire

    • K. Doverspike
    • L. B. Rowland
    • J. A. Freitas

    OriginalPaper Pages: 269 - 273

12. Operation of a compact electron cyclotron resonance source for the growth of gallium nitride by molecular beam epitaxy (ECR-MBE)

    • R. J. Molnar
    • R. Singh
    • T. D. Moustakas

    OriginalPaper Pages: 275 - 281

13. Progress in silicon carbide semiconductor electronics technology

    • Philip G. Neudeck

    OriginalPaper Pages: 283 - 288

14. Hydrogen incorporation in boron-doped 6H-SiC CVD epilayers produced using site-competition epitaxy

    • D. J. Larkin
    • S. G. Sridhara
    • W. J. Choyke

    OriginalPaper Pages: 289 - 294

15. Surface morphology of silicon carbide epitaxial films

    • J. Anthony Powell
    • David J. Larkin
    • Phillip B. Abel

    OriginalPaper Pages: 295 - 301

16. Characterization and optimization of the SiO₂/SiC metal-oxide semiconductor interface

    • J. N. Shenoy
    • G. L. Chindalore
    • K. G. Irvine

    OriginalPaper Pages: 303 - 309

17. A novel method for etching trenches in silicon carbide

    • Dev Alok
    • B. J. Baliga

    OriginalPaper Pages: 311 - 314

18. Low resistivity as-deposited ohmic contacts to 3C-SiC

    • A. Moki
    • P. Shenoy
    • M. G. Spencer

    OriginalPaper Pages: 315 - 318

19. Microcharacterization of composition modulations in epitaxial ZnSe^1-xTe_x

    • S. P. Ahrenkiel
    • M. H. Bode
    • J.K Furdyna

    OriginalPaper Pages: 319 - 325

20. The effects of laser irradiation on InGaAs/GaAs multiple quantum wells grown by metalorganic molecular beam epitaxy

    • H. K. Dong
    • S. C. H. Hung
    • C. W. Tu

    OriginalPaper Pages: 327 - 332

21. In_xGa_1-xAs ohmic contacts to n-type GaAs prepared by sputter deposition

    • Masayuki Okunishi
    • Chihiro J. Uchibori
    • Masanori Murakami

    OriginalPaper Pages: 333 - 339

22. Nature and evolution of interfaces in Si/Si_1-xGe_x superlattices

    • J. M. Baribeau
    • D. J. Lockwood
    • R. L. Headrick

    OriginalPaper Pages: 341 - 349

23. The formation of large-grain CulnSe₂ films by selenization by high-rate Se transport under moderate vacuum conditions

    • D. S. Albin
    • J. R. Tuttle
    • R. Noufi

    OriginalPaper Pages: 351 - 357

24. Mobility of modulation doped AlGaAs/low-temperature MBE-grown GaAs heterostructures

    • D. Schulte
    • S. Subramanian
    • J. R. Arthur

    OriginalPaper Pages: 359 - 363

25. Reactivity of no-clean pastes and fluxes for the surface mount technology process—part I: Corrosion behavior of Cu, Sn, and Pb

    • P. L. Cavallotti
    • G. Zangari
    • V. Sirtori

    OriginalPaper Pages: 365 - 370

26. Reactivity of no-clean pastes and fluxes for the surface mount technology process—part II: Corrosion risk measurements for printed circuit boards and solder joints

    • P. L. Cavallotti
    • G. Zangari
    • A. Manara

    OriginalPaper Pages: 371 - 378

27. Quantitative surface photovoltage spectroscopy of semiconductor interfaces

    • L. Kronik
    • M. Leibovitch
    • Yoram Shapira

    OriginalPaper Pages: 379 - 385

28. Molecular beam epitaxial regrowth of InAs/AiSb/GaSb heterostructures on patterned substrates

    • M. Walther
    • G. Kramer
    • N. Cave

    OriginalPaper Pages: 387 - 390

29. Real-Time monitoring of III-V molecular beam epitaxial growth using spectroscopic ellipsometry

    • F. G. Celii
    • W. M. Duncan
    • Y. C. Kao

    OriginalPaper Pages: 391 - 395

30. Metal removal from silicon surfaces in wet chemical systems

    • Gerd J. Norga
    • Lionel C. Kimerling

    OriginalPaper Pages: 397 - 404

31. The temperature-composition phase diagram and the miscibility gap of Hg_1-xCd_xTe solid solutions by dynamic mass-loss measurements

    • Kuo-Tong Chen
    • Heribert Wiedemeier

    OriginalPaper Pages: 405 - 411

32. Photoluminescence study of ZnO varistor stability

    • M. S. Ramanachalam
    • A. Rohatgi
    • T. K. Gupta

    OriginalPaper Pages: 413 - 419