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Low resistivity as-deposited ohmic contacts to 3C-SiC

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Abstract

The contact resistivities of Al and Ti ohmic contacts to n-type 3C-SiC were measured using the circular TLM method. The surface doping concentration under the contact was increased by ion-implantation of nitrogen into SiC. The contact resistivity was observed to decrease with increasing surface doping concentration for both Al and Ti contacts. The minimum value for the contact resistivities for Aland Ti contacts was 1.4x 10-5and 1.5 x 10-5 ω cm2, respectively, at the surface doping concentration of 3 x 1020 cm-3 without any annealing of the contacts. These values are an order of magnitude lower than previously reported minimum values for as-deposited ohmic contacts on n-type 3C-SiC.

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Author notes

  1. A. Moki

    Present address: Sanken Electric Company Ltd., 352, Niiza, Saitama, Japan

Authors and Affiliations

  1. Power Semiconductor Research Center, North Carolina State University, 27695-7924, Raleigh, NC

    A. Moki, P. Shenoy, D. Alok & B. J. Baliga

  2. Materials Science Research Center of Excellence, School of Engineering, Howard University, 20059, Washington, DC

    K. Wongchotigul & M. G. Spencer

Authors
  1. A. Moki
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  2. P. Shenoy
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  3. D. Alok
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  4. B. J. Baliga
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  5. K. Wongchotigul
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  6. M. G. Spencer
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Moki, A., Shenoy, P., Alok, D. et al. Low resistivity as-deposited ohmic contacts to 3C-SiC. J. Electron. Mater. 24, 315–318 (1995). https://doi.org/10.1007/BF02659693

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  • DOI: https://doi.org/10.1007/BF02659693

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