Epitaxial growth of cubic gan on (111) GaAs by metalorganic chemical vapor deposition C. H. HongK. WangD. Pavlidis OriginalPaper Pages: 213 - 218
Native defects and dopants in gan studied through photoluminescence and optically detected magnetic resonance T. A. KennedyE. R. GlaserD. K. Wickenden OriginalPaper Pages: 219 - 223
Valence-band discontinuity between GaN and AIN measured by x-ray photoemission spectroscopy G. MartinS. StriteH. Morkoç OriginalPaper Pages: 225 - 227
Chemically assisted ion beam etching of gallium nitride A. T. PingC. YoutseyJ. N. Kuznia OriginalPaper Pages: 229 - 234
The effects of N+ dose in implantation into 6h-sic epilayers Tsunenobu KimotoAkira ItohMasanori Watanabe OriginalPaper Pages: 235 - 240
A microstructural comparison of the initial growth of AlN and GaN layers on basal plane sapphire and sic substrates by low pressure metalorganic chemical vapor deposition T. GeorgeW. T. PikeP. Chang-Chien OriginalPaper Pages: 241 - 247
The influence of nitrogen ion energy on the quality of GaN films grown with molecular beam epitaxy T. C. FuN. NewmanE. R. Weber OriginalPaper Pages: 249 - 255
High-Quality GaN heteroepitaxial films grown by metalorganic chemical vapor deposition K. G. FertittaA. L. HolmesF. A. Ponce OriginalPaper Pages: 257 - 261
The growth and properties of mixed group V nitrides J. W. OrtonD. E. LacklisonT. L. Tansley OriginalPaper Pages: 263 - 268
The effect of GaN and ain buffer layers on GaN film properties grown on both C-plane and A-plane sapphire K. DoverspikeL. B. RowlandJ. A. Freitas OriginalPaper Pages: 269 - 273
Operation of a compact electron cyclotron resonance source for the growth of gallium nitride by molecular beam epitaxy (ECR-MBE) R. J. MolnarR. SinghT. D. Moustakas OriginalPaper Pages: 275 - 281
Progress in silicon carbide semiconductor electronics technology Philip G. Neudeck OriginalPaper Pages: 283 - 288
Hydrogen incorporation in boron-doped 6H-SiC CVD epilayers produced using site-competition epitaxy D. J. LarkinS. G. SridharaW. J. Choyke OriginalPaper Pages: 289 - 294
Surface morphology of silicon carbide epitaxial films J. Anthony PowellDavid J. LarkinPhillip B. Abel OriginalPaper Pages: 295 - 301
Characterization and optimization of the SiO2/SiC metal-oxide semiconductor interface J. N. ShenoyG. L. ChindaloreK. G. Irvine OriginalPaper Pages: 303 - 309
A novel method for etching trenches in silicon carbide Dev AlokB. J. Baliga OriginalPaper Pages: 311 - 314
Low resistivity as-deposited ohmic contacts to 3C-SiC A. MokiP. ShenoyM. G. Spencer OriginalPaper Pages: 315 - 318
Microcharacterization of composition modulations in epitaxial ZnSe1-xTex S. P. AhrenkielM. H. BodeJ.K Furdyna OriginalPaper Pages: 319 - 325
The effects of laser irradiation on InGaAs/GaAs multiple quantum wells grown by metalorganic molecular beam epitaxy H. K. DongS. C. H. HungC. W. Tu OriginalPaper Pages: 327 - 332
InxGa1-xAs ohmic contacts to n-type GaAs prepared by sputter deposition Masayuki OkunishiChihiro J. UchiboriMasanori Murakami OriginalPaper Pages: 333 - 339
Nature and evolution of interfaces in Si/Si1-xGex superlattices J. M. BaribeauD. J. LockwoodR. L. Headrick OriginalPaper Pages: 341 - 349
The formation of large-grain CulnSe2 films by selenization by high-rate Se transport under moderate vacuum conditions D. S. AlbinJ. R. TuttleR. Noufi OriginalPaper Pages: 351 - 357
Mobility of modulation doped AlGaAs/low-temperature MBE-grown GaAs heterostructures D. SchulteS. SubramanianJ. R. Arthur OriginalPaper Pages: 359 - 363
Reactivity of no-clean pastes and fluxes for the surface mount technology process—part I: Corrosion behavior of Cu, Sn, and Pb P. L. CavallottiG. ZangariV. Sirtori OriginalPaper Pages: 365 - 370
Reactivity of no-clean pastes and fluxes for the surface mount technology process—part II: Corrosion risk measurements for printed circuit boards and solder joints P. L. CavallottiG. ZangariA. Manara OriginalPaper Pages: 371 - 378
Quantitative surface photovoltage spectroscopy of semiconductor interfaces L. KronikM. LeibovitchYoram Shapira OriginalPaper Pages: 379 - 385
Molecular beam epitaxial regrowth of InAs/AiSb/GaSb heterostructures on patterned substrates M. WaltherG. KramerN. Cave OriginalPaper Pages: 387 - 390
Real-Time monitoring of III-V molecular beam epitaxial growth using spectroscopic ellipsometry F. G. CeliiW. M. DuncanY. C. Kao OriginalPaper Pages: 391 - 395
Metal removal from silicon surfaces in wet chemical systems Gerd J. NorgaLionel C. Kimerling OriginalPaper Pages: 397 - 404
The temperature-composition phase diagram and the miscibility gap of Hg1-xCdxTe solid solutions by dynamic mass-loss measurements Kuo-Tong ChenHeribert Wiedemeier OriginalPaper Pages: 405 - 411
Photoluminescence study of ZnO varistor stability M. S. RamanachalamA. RohatgiT. K. Gupta OriginalPaper Pages: 413 - 419