1. Foreword

   • David B. Knorr
   • Harish D. Merchant

   Special Issue Paper Pages: 579 - 579

2. Effects of microstructure on interconnect and via reliability: Multimodal failure statistics

   • C. V. Thompson
   • H. Kahn

   Special Issue Paper Pages: 581 - 587

3. Relationship between texture and electromigration lifetime in sputtered AI-1% Si thin films

   • Ann N. Campbell
   • Russell E. Mikawa
   • David B. Knorr

   Special Issue Paper Pages: 589 - 596

4. The microstructure, mechanical stress, texture, and electromigration behavior of Al-Pd alloys

   • K. P. Rodbell
   • D. B. Knorr
   • J. D. Mis

   Special Issue Paper Pages: 597 - 606

5. The effect of grain orientation on the relaxation of thermomechanical stress and hillock growth in AI-1%Si conductor layers on silicon substrates

   • R. A. Schwarzer
   • D. Gerth

   Special Issue Paper Pages: 607 - 610

6. Texture and microstructure of thin copper films

   • D. P. Tracy
   • D. B. Knorr

   Special Issue Paper Pages: 611 - 616

7. The correlation of texture and magnetic properties in Co-Cr films

   • Li Cheng-Zhang
   • J. A. Szpunar

   Special Issue Paper Pages: 617 - 622

8. Tensile properties of aluminum/alumina multi-layered thin films

   • G. T. Mearini
   • R. W. Hoffman

   Special Issue Paper Pages: 623 - 629

9. Annealing kinetics and embrittlement of electrodeposited copper

   • H. D. Merchant

   Special Issue Paper Pages: 631 - 638

10. Transmission electron microscopy of electrodeposits

    • L. A. Giannuzzi
    • P. R. Howell
    • W. R. Bitler

    Special Issue Paper Pages: 639 - 644

11. The texture of electrodeposited iron foils

    • D. Y. Li
    • J. A. Szpunar

    Special Issue Paper Pages: 645 - 651

12. A Monte-Carlo simulation of the electrodeposition process

    • D. Y. Li
    • J. A. Szpunar

    Special Issue Paper Pages: 653 - 657

13. Annealing of electrolytic Cu-Bi, Ni-Bi, and Co-Bi alloys

    • I. M. Kovensky
    • V. V. Povetkin

    Special Issue Paper Pages: 659 - 660

14. Improved control of momentary rapid thermal annnealing for silicidation

    • P. D. Agnello
    • A. Fink

    Regular Issue Paper Pages: 661 - 665

15. Cobalt disilicide as dopant diffusion source for polysilicon gates in MOS devices

    • J. Lin
    • W. Chen
    • C. Magee

    Regular Issue Paper Pages: 667 - 673

16. Space charge limited conduction in a-Ge₂₂Se₆₈M₁₀ (M = Cd,ln,Pb,Te)

    • S. Kumar
    • R. Arora
    • A. Kumar

    Regular Issue Paper Pages: 675 - 679

17. Effects of bias-temperature cycling on electrical characteristics of YBCO/YSZ/Si SulS capacitors

    • Eric M. Ajimine
    • Jianmin Qiao
    • D. K. Fork

    Regular Issue Paper Pages: 681 - 684

18. Crystallographic evaluation of ZnSe crystals by x-ray diffraction

    • Yasuo Okuno
    • Hitoshi Tamura
    • Tsuyoshi Maruyama

    Regular Issue Paper Pages: 685 - 688

19. Effect of carbon on thermal oxidation of silicon and electrical properties of SiO₂-Si structures

    • R. B. Beck
    • T. Brozek
    • R. E. Tressler

    Regular Issue Paper Pages: 689 - 694

20. Phase studies of the Cd-Fe-Se system in the Cd-rich region

    • Heribert Wiedemeier
    • Xuejun Huang

    Regular Issue Paper Pages: 695 - 699

21. Structure of organometallic chemical vapor deposited BaTiO₃ thin films on LaAIO₃

    • J. Chen
    • L. A. Wills
    • T. J. Marks

    Letter Pages: 701 - 703

22. Erratum

    • Ashawant Gupta
    • Carmen Cook
    • Takashi Tokuyama

    Erratum Pages: 705 - 705