Abstract
BaTiO3 thin films grown on LaA1O3 by organometallic chemical vapor deposition were characterized with cross-sectional high resolution transmission electron microscopy. Epitaxy was confirmed for the films grown on (100) oriented substrates. The films displayed an aaxis orientation. The interface between the film and substrate was nearly atomically abrupt. Partial relaxation of the films was observed as a result of misfit dislocation formation.
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Chen, J., Wills, L.A., Wessels, B.W. et al. Structure of organometallic chemical vapor deposited BaTiO3 thin films on LaAIO3 . J. Electron. Mater. 22, 701–703 (1993). https://doi.org/10.1007/BF02666421
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DOI: https://doi.org/10.1007/BF02666421