1. Forward

   EditorialNotes Pages: 667 - 668

2. Wafer bonding technology for silicon-on-lnsulator applications: A review

   • Kiyoshi Mitani
   • Ulrich M. Gösele

   OriginalPaper Pages: 669 - 676

3. Effects of radiative processing steps on inversion layer mobility and channel hot carrier damage in reoxidized nitrided oxide mosfets

   • Gregory Dunn
   • John Krick

   OriginalPaper Pages: 677 - 681

4. Numerical analysis of silicon-on-lnsulator short channel effects in a radiation environment

   • J. H. Smith
   • R. Lawrence
   • G. J. Campisi

   OriginalPaper Pages: 683 - 687

5. A comparison of reactor and accelerator sources for neutron effects testing

   • Samuel Wilensky

   OriginalPaper Pages: 689 - 691

6. A framework for understanding fast-neutron induced defects in SiO₂ MOS structures

   • W. Chang

   OriginalPaper Pages: 693 - 699

7. Fast neutron radiation damage effects on high resistivity silicon junction detectors

   • Zheng Li
   • H. W. Kraner

   OriginalPaper Pages: 701 - 705

8. Electron spin resonance study of defects in CVD-grown 3C-SiC irradiated with 2MeV protons

   • Hisayoshi Itoh
   • Masahito Yoshikawa
   • Sadafumi Yoshida

   OriginalPaper Pages: 707 - 710

9. Kinetics of trapping, detrapping, and trap generation

   • C. K. Williams

   OriginalPaper Pages: 711 - 720

10. Electrical characterization of defects created in the Si-SiO₂ system by ionizing radiation

    • Edward H. Nicollian

    OriginalPaper Pages: 721 - 729

11. Analysis of persistent photoconductivity due to potential barriers

    • Jeremiah R. Lowney
    • Santos Mayo

    OriginalPaper Pages: 731 - 736

12. Effects of combined x-ray Irradiation and hot-electron injection on NMOS transistors

    • Artur Balasinski
    • Wenliang Chen
    • Tso-Ping Ma

    OriginalPaper Pages: 737 - 743

13. Recombination-induced random walk diffusion of interstitial carbon in silicon

    • A. R. Frederickson
    • A. S. Karakashian

    OriginalPaper Pages: 745 - 752

14. X-ray lithography induced radiation damage in CMOS and bipolar devices

    • L. K. Wang

    OriginalPaper Pages: 753 - 756

15. Radiation damage effects on bipolar and MOS devices in X-Ray lithography

    • L. C. Hsia
    • T. Christensen

    OriginalPaper Pages: 757 - 761

16. Hydrogen model for radiation-induced interface states in SiO₂-on-Si Structures: A review of the evidence

    • David L. Griscom

    OriginalPaper Pages: 763 - 767

17. Effect of hydrogen annealing on hot-carrier instability of X-Ray irradiated CMOS devices

    • C. C. H. Hsu
    • L. K. Wang
    • A. Acovic

    OriginalPaper Pages: 769 - 773

18. Effects of hydrogen annealing on MOS oxides

    • N. S. Saks
    • J. M. Andrews

    OriginalPaper Pages: 775 - 780