Abstract
Electron spin resonance (ESR) was used to study defects induced by 2MeV-proton irradiation in cubic silicon carbide (3C-SiC) epitaxially grown on Si substrates by chemical vapor deposition. A new ESR signal labeled T5 was observed at temperatures lower than ≈100 K in Al doped, p-type 3C-SiC epilayers irradiated. The T5 signal has anisotropic g-values of g1 = 2.0020 ± 0.0001, g2 = 2.0007 ± 0.0001,and g3 = 1.9951 ± 0.0001. The principal axes of the g-tensor were found to be along the 〈100〉 directions, indicating that the T5 center has D2 symmetry. Isochronal annealing of the irradiated epilayers showed that the T5 center was annealed at temperatures around 150° C. A tentative model is discussed for the T5 center.
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References
See, for example, Articles in Silicon Carbide, A High Temperature Semiconductor, eds. J. R. O’Connor and J. Smiltens (Pergamon, New York, 1960).
S. Nishino, J. W. Powell and H. A. Hill, Appl. Phys. Lett.42, 460 (1983).
S. Yoshida, K. Endo, E. Sakuraa, S. Misawa, H. Okumura, H. Daimon, E. Muneyama and M. Yamanaka, Mat. Res. Soc. Symp. Proc.No. 97 (Mater. Res. Soc, 1987) p. 259.
P. Liaw and R. F. Davis, J. Electrochem. Soc.132, 642 (1985).
Y. Kondo, T. Takahashi, K. Ishii, Y. Hayashi, E. Sakuma, S. Misawa, H. Daimon, M. Yamanaka and S. Yoshida, IEEE Electron Device LettEDL-7, 404 (1986).
K. Shibahara, T. Saito, S. Nishino and H. Matsunami, IEEE Electron Device LettEDL-7 692 (1986).
J. A. Feitas, Jr., S. G. Bishop, J. A. Edmond, J. Ryu and R. F. Davis, J. Appl. Phys.61, 2011 (1987).
V. Nagesh, J. W. Farmer, R. F. Davis and H. S. Kong, Radiation Effects and Defects in Solids112, 77 (1990).
I. Nashiyama, T. Nishijima, E. Sakuma and S. Yoshida, Nucl. Inst. & Methods Phys. Res.B33, 599 (1988).
H. Itoh, N. Hayakawa, I. Nashiyama and E. Sakuma, J. Appl. Phys.66, 4529 (1989).
H. Itoh, M. Yoshikawa, I. Nashiyama, S. Misawa, H. Okumura and S. Yoshida, IEEE Trans. Nucl. Sci.37, 1732 (1990).
P. J. Lin-Chungand Y. Li, Mater. Sci. ForumVol. 10-12, ed. H. J. von Bardeleben (Trans Tech, lSwitzerland, 1986) p. 1247.
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Itoh, H., Yoshikawa, M., Nashiyama, I. et al. Electron spin resonance study of defects in CVD-grown 3C-SiC irradiated with 2MeV protons. J. Electron. Mater. 21, 707–710 (1992). https://doi.org/10.1007/BF02655600
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DOI: https://doi.org/10.1007/BF02655600