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Kinetics of trapping, detrapping, and trap generation

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Abstract

The trapping and detrapping of charge in the oxides have been studied for two decades. While there has been a lot of progress in understanding the mechanisms responsible for charge trapping and detrapping in these oxides, it is still not fully understood. For example, even under low field injection conditions first order trapping kinetics do not accurately model the observed data. Under high field injection the situation is exacerbated by the generation of additional trapping sites during the injection process, which is also not completely understood. The paper presents a review of the kinetics of trapping and detrapping and describes various models that have been proposed to explain experimentally observed trapping-detrapping behavior.

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  1. MCNC, Center for Microelectronics, P.O. Box 12889, 27709-2889, Research Triangle Park, NC

    C. K. Williams

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Williams, C.K. Kinetics of trapping, detrapping, and trap generation. J. Electron. Mater. 21, 711–720 (1992). https://doi.org/10.1007/BF02655601

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  • DOI: https://doi.org/10.1007/BF02655601

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