1. Characterization of Si homoepitaxial films grown with and without surface photoactivation by ArF excimer laser-induced photodissociation of Si₂H₆

   • S. Krishnan
   • S. Lian
   • S. Banerjee

   OriginalPaper Pages: 559 - 562

2. Growth by CVT and characterization of Hg_1-xCd_xTe epitaxial layers

   • Heribert Wiedemeier
   • Yi-Gao Sha

   OriginalPaper Pages: 563 - 573

3. Temperature dependence of the electrical conduction in RuO₂-based thick film resistors

   • Bi-Shiou Chiou
   • Jer-Yuan Sheu

   OriginalPaper Pages: 575 - 581

4. Decomposition studies of tertiarybutyldimethylantimony

   • D. S. Cao
   • C. H. Chen
   • B. A. Vaartstra

   OriginalPaper Pages: 583 - 588

5. Laser-induced degradation of the photoluminescence intensity of porous silicon

   • C. Tsai
   • K. -H. Li
   • J. M. White

   OriginalPaper Pages: 589 - 591

6. Incorporation of boron into UHV/CVD-grown germanium-silicon epitaxial layers

   • D. W. Greve
   • Marco Racanelli

   OriginalPaper Pages: 593 - 597

7. Characterization of eutectic Sn-Bi solder joints

   • Z. Mei
   • J. W. Morris

   OriginalPaper Pages: 599 - 607

8. Photoluminescence characterization of AlGaN-GaN pseudomorphic quantum wells and calculation of strain induced bandgap shifts

   • S. Krishnankutty
   • R. M. Kolbas
   • D. T. Olson

   OriginalPaper Pages: 609 - 612

9. Effects of growth conditions on the composition of CVT and PVT grown Hg_1-x Cd _x Te epitaxial layers

   • Yi-Gao Sha
   • Heribert Wiedemeier

   OriginalPaper Pages: 613 - 617

10. Temperature effects in GaAs OEMS spectra

    • M. Di Marco
    • J. G. Swanson

    OriginalPaper Pages: 619 - 628

11. Electrical conductivity and photoluminescence of diamond films grown by downstream microwave plasma CVD

    • B. R. Stoner
    • J. T. Glass
    • J. W. Vandersande

    OriginalPaper Pages: 629 - 634

12. Effects of annealing conditions on the properties of tantalum oxide films on silicon substrates

    • S. W. Park
    • Y. K. Baek
    • H. B. Im

    OriginalPaper Pages: 635 - 639

13. Low threading dislocation density GaAs on Si(100) with InGaAs/GaAs strained-layer superlattice grown by migration-enhanced epitaxy

    • Kazuhiko Nozawa
    • Yoshiji Horikoshi

    OriginalPaper Pages: 641 - 645

14. Microstructure and creep of eutectic indium/tin on copper and nickel substrates

    • J. L. Freer
    • J. W. Morris

    OriginalPaper Pages: 647 - 652

15. Fabrication ofn-native oxide/p-ZnTe heterojunctions by the anodic oxidation of ZnTe MBE layers

    • A. Sher
    • R. D. Feldman
    • J. W. Sulhoff

    OriginalPaper Pages: 653 - 657

16. The constructions and optical characteristics of multi-color or full-color ACTFEL display devices

    • J. W. Li
    • Y. K. Su
    • M. Yokoyama

    OriginalPaper Pages: 659 - 665