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Laser-induced degradation of the photoluminescence intensity of porous silicon

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Abstract

Transmission Fourier-transform infrared (FTIR) spectroscopy has been used to monitor laser-induced degradation of the photoluminescence (PL) intensity of porous Si. It is observed that the release of hydrogen from silicon hydride surface species coincides with a decrease in the PL intensity and oxidation of the porous Si. The as-anodized PL characteristics can be recovered, with a slight blue shift, by a brief immersion in hydrofluoric acid.

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Authors and Affiliations

  1. Photonic Devices Group, Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, 78712, Austin, Texas

    C. Tsai, K. -H. Li & J. C. Campbell

  2. Department of Chemistry and Biochemistry, The University of Texas at Austin, 78712, Austin, TX

    B. K. Hance & J. M. White

Authors
  1. C. Tsai
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  2. K. -H. Li
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  3. J. C. Campbell
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  4. B. K. Hance
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  5. J. M. White
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Tsai, C., Li, K.H., Campbell, J.C. et al. Laser-induced degradation of the photoluminescence intensity of porous silicon. J. Electron. Mater. 21, 589–591 (1992). https://doi.org/10.1007/BF02655425

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  • DOI: https://doi.org/10.1007/BF02655425

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