1. Photoluminescence characterization of the effects of rapid thermal annealing on AlGaAs/GaAs modulation-doped quantum wells

   • Ananth Dodabalapur
   • B. G. Streetman

   OriginalPaper Pages: 1333 - 1338

2. Thermal and electrical stability of ZnO varistors with glass additives

   • Bi-Shiou Chiou
   • Tzuu-Chian Chen
   • Jenq-Gong Duh

   OriginalPaper Pages: 1339 - 1344

3. PCB glass-fibre laminates: Thermal conductivity measurements and their effect on simulation

   • F. Sarvar
   • N. J. Poole
   • P. A. Witting

   OriginalPaper Pages: 1345 - 1350

4. A comparative study of selective carbon doping in MOCVD GaAs using trimethylarsenic and arsine

   • Hyukju J. Moon
   • Thomas G. Stoebe
   • Brian K. Chadwick

   OriginalPaper Pages: 1351 - 1355

5. Benzocyclobutene (BCB) dielectrics for the fabrication of high density, thin film multichip modules

   • David Burdeaux
   • Paul Townsend
   • Philip Garrou

   OriginalPaper Pages: 1357 - 1366

6. MOCVD growth of AlGaAs/GaAs structures on nonplanar {111} substrates: Evidence for lateral gas phase diffusion

   • K. M. Dzurko
   • S. G. Hummell
   • P. D. Dapkus

   OriginalPaper Pages: 1367 - 1372

7. Mass transport and crystal growth of cadmium telluride by PVT

   • Heribert Wiedemeier
   • Yan-Chen Bai

   OriginalPaper Pages: 1373 - 1381

8. A new algorithm for layer thickness and index step estimation in multi-layer hetero-epitaxial structures

   • Pieter L. Swart
   • Beatrys M. Lacquet

   OriginalPaper Pages: 1383 - 1394

9. Low temperature Si₂H₆ Si epitaxy in-situ doped with AsH₃/SiH₄

   • M. Sadamoto
   • J. H. Comfort
   • R. Reif

   OriginalPaper Pages: 1395 - 1402

10. Characteristics of thin film transistors fabricated in polysilicon films deposited by plasma enhanced chemical vapor deposition

    • J. -J. J. Hajjar
    • Rafael Reif

    OriginalPaper Pages: 1403 - 1409

11. Plasma enhanced chemical vapor deposition of SiO₂ films at low temperatures using SiCl₄ and O₂

    • A. Ortiz
    • S. Lopez
    • G. Soto

    OriginalPaper Pages: 1411 - 1415

12. Enhanced/suppressed interdiffusion of InGaAs-GaAs-AlGaAs strained layers by controlling impurities and gallium vacancies

    • K. Y. Hsieh
    • Y. L. Hwang
    • R. M. Kolbas

    OriginalPaper Pages: 1417 - 1423

13. Tellurium induced lattice dilation in OMVPE grown InP

    • F. G. Kellert
    • K. T. Chan
    • V. M. Robbins

    OriginalPaper Pages: 1425 - 1428

14. Hall analysis of the electrical properties of n-type Al_xGa_1-xAs grown by MOVPE

    • A. W. R. Leitch
    • D. Raubenheimer

    OriginalPaper Pages: 1429 - 1432