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Plasma enhanced chemical vapor deposition of SiO2 films at low temperatures using SiCl4 and O2

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Abstract

Silicon dioxide films have been deposited by Plasma-Enhanced Chemical Vapor Deposition (PECVD) technique using SiCl4 and O2 as reactive materials. Infra-red transmittance, Auger electron spectroscopy analysis, ellipsometry, electrical, and chemical etch measurements have been used to characterize these films. It is possible to obtain good quality oxides at a substrate temperature of 200° C using a low flow of reactant gases. High flow of reactant gases results in highly non-homogeneous porous films. The best oxide films obtained show destructive breakdown at electrical fields above 4 MV/cm and a fixed charge density of the order of 2.6 × 1011 charges/cm2.

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Authors and Affiliations

  1. Instituto de Investigaciones en Materiales, UNAM, Apartado Postal 70-360, 04510, Mexico D. F., Mexico

    A. Ortiz & S. Lopez

  2. Physics Department, Centro de Investigaciones del IPN, Apartado Postal 14-740, 07000, Mexico DF, Mexico

    C. Falcony

  3. Instituto de Fisica, Laboratorio de Ensenada, UNAM, Apartado Postal 2681, CP 22800, Ensenada, BC, Mexico

    M. Farias, L. Cota-Araiza & G. Soto

Authors
  1. A. Ortiz
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  2. S. Lopez
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  3. C. Falcony
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  4. M. Farias
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  5. L. Cota-Araiza
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  6. G. Soto
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Ortiz, A., Lopez, S., Falcony, C. et al. Plasma enhanced chemical vapor deposition of SiO2 films at low temperatures using SiCl4 and O2 . J. Electron. Mater. 19, 1411–1415 (1990). https://doi.org/10.1007/BF02662831

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  • DOI: https://doi.org/10.1007/BF02662831

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