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Tellurium induced lattice dilation in OMVPE grown InP

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Abstract

For organometallic vapor phase epitaxial (OMVPE) grown InP, the change in lattice constant is measured as a function of tellurium (Te) dopant concentration. We observe ~0.15% dilation in the InP lattice constant at a Te concentration of ~1020 cm-3. Our measurements are compared to predictions from Vegard’s Law.

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Authors and Affiliations

  1. Microwave Technology Division, Hewlett-Packard Company, 1412 Fountaingrove Parkway, 95403, Santa Rosa, CA

    F. G. Kellert & K. T. Chan

  2. Circuit Technology Research and Development, Hewlett-Packard Company, P. O. Box 10350, 94303, Palo Alto, CA

    J. E. Turner

  3. Hewlett Packard Laboratories, Hewlett-Packard Company, 3500 Deer Creek Road, 94303, Palo Alto, CA

    V. M. Robbins

Authors
  1. F. G. Kellert
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  2. K. T. Chan
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  3. J. E. Turner
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  4. V. M. Robbins
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Kellert, F.G., Chan, K.T., Turner, J.E. et al. Tellurium induced lattice dilation in OMVPE grown InP. J. Electron. Mater. 19, 1425–1428 (1990). https://doi.org/10.1007/BF02662833

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  • DOI: https://doi.org/10.1007/BF02662833

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