Photoluminescence characterization of the effects of rapid thermal annealing on AlGaAs/GaAs modulation-doped quantum wells Ananth DodabalapurB. G. Streetman OriginalPaper Pages: 1333 - 1338
Thermal and electrical stability of ZnO varistors with glass additives Bi-Shiou ChiouTzuu-Chian ChenJenq-Gong Duh OriginalPaper Pages: 1339 - 1344
PCB glass-fibre laminates: Thermal conductivity measurements and their effect on simulation F. SarvarN. J. PooleP. A. Witting OriginalPaper Pages: 1345 - 1350
A comparative study of selective carbon doping in MOCVD GaAs using trimethylarsenic and arsine Hyukju J. MoonThomas G. StoebeBrian K. Chadwick OriginalPaper Pages: 1351 - 1355
Benzocyclobutene (BCB) dielectrics for the fabrication of high density, thin film multichip modules David BurdeauxPaul TownsendPhilip Garrou OriginalPaper Pages: 1357 - 1366
MOCVD growth of AlGaAs/GaAs structures on nonplanar {111} substrates: Evidence for lateral gas phase diffusion K. M. DzurkoS. G. HummellP. D. Dapkus OriginalPaper Pages: 1367 - 1372
Mass transport and crystal growth of cadmium telluride by PVT Heribert WiedemeierYan-Chen Bai OriginalPaper Pages: 1373 - 1381
A new algorithm for layer thickness and index step estimation in multi-layer hetero-epitaxial structures Pieter L. SwartBeatrys M. Lacquet OriginalPaper Pages: 1383 - 1394
Low temperature Si2H6 Si epitaxy in-situ doped with AsH3/SiH4 M. SadamotoJ. H. ComfortR. Reif OriginalPaper Pages: 1395 - 1402
Characteristics of thin film transistors fabricated in polysilicon films deposited by plasma enhanced chemical vapor deposition J. -J. J. HajjarRafael Reif OriginalPaper Pages: 1403 - 1409
Plasma enhanced chemical vapor deposition of SiO2 films at low temperatures using SiCl4 and O2 A. OrtizS. LopezG. Soto OriginalPaper Pages: 1411 - 1415
Enhanced/suppressed interdiffusion of InGaAs-GaAs-AlGaAs strained layers by controlling impurities and gallium vacancies K. Y. HsiehY. L. HwangR. M. Kolbas OriginalPaper Pages: 1417 - 1423
Tellurium induced lattice dilation in OMVPE grown InP F. G. KellertK. T. ChanV. M. Robbins OriginalPaper Pages: 1425 - 1428
Hall analysis of the electrical properties of n-type AlxGa1-xAs grown by MOVPE A. W. R. LeitchD. Raubenheimer OriginalPaper Pages: 1429 - 1432