Computer simulation of transport in thin films M. P. AndersonS. Ling OriginalPaper Pages: 1161 - 1169
Phase reactions at semiconductor metallization interfaces A. S. BhansaliD. H. KoR. Sinclair OriginalPaper Pages: 1171 - 1175
Grain boundary diffusion and growth of titanium silicide layers on silicon Yunji L. CorcoranAlexander H. KingBonggi Kim OriginalPaper Pages: 1177 - 1183
Titanium silicide-silicon interface degradation during heat treatment N. de LanerolleB. KimJ. Berg OriginalPaper Pages: 1185 - 1192
Microstructural effects on the 1/f α noise of thin aluminum based films J. G. CottleN. S. Klonaris OriginalPaper Pages: 1201 - 1206
Electromigration-induced failures in interconnects with bimodal grain size distributions J. ChoC. V. Thompson OriginalPaper Pages: 1207 - 1212
Morphology of electromigration-induced damage and failure in Al alloy thin film conductors John E. SanchezL. T. McKnellyJ. W. Morris OriginalPaper Pages: 1213 - 1220
Microstructure and barrier properties of reactively sputtered Ti-W nitride Ivo J. RaaijmakersTarshish SetalvadKI-Bum Kim OriginalPaper Pages: 1221 - 1230
Mechanical properties and microstructural characterization of Al-0.5%Cu thin films Ramnath VenkatramanJohn C. BravmanDavid B. Fraser OriginalPaper Pages: 1231 - 1237
The formation of elevated barrier height Schottky diodes to inp and In0.53Ga0.47as using thin, excimer laser-deposited Cd interlayers Thomas J. LicataMichael T. SchmidtRajaram Bhat OriginalPaper Pages: 1239 - 1246
Mechanisms for the formation of low temperature, non-alloyed Au-Ge ohmic contacts to n-GaAs M. A. Dornath-MohrM. W. ColeF. Cosandey OriginalPaper Pages: 1247 - 1255
Investigation of the structural and electrical properties of Al-Ge-Ni contacts to GaAs R. J. GrahamR. W. NelsonR. J. Roede OriginalPaper Pages: 1257 - 1263
Optimization of ohmic contacts for reliable heterostructure GaAs materials C. S. WuK. K. YuH. Kanber OriginalPaper Pages: 1265 - 1271
Superplastic creep of eutectic tinlead solder joints Z. MeiD. GrivasJ. W. Morris OriginalPaper Pages: 1273 - 1280
Properties of spin-on glass as an insulator for InP metal-insulator-semiconductor structures T. MiiH. C. Casey OriginalPaper Pages: 1281 - 1288
On the generation of misfit dislocations William A. JesserBradley A. Fox OriginalPaper Pages: 1289 - 1297
On the structure of low-temperature PECVD silicon dioxide films R. A. B. Devine OriginalPaper Pages: 1299 - 1301
The direct determination of the vacancy concentration and P-T phase diagram of Hgin0.8Zn0.2Te by dynamic mass-loss measurements Yi Gao ShaHeribert Wiedemeier OriginalPaper Pages: 1303 - 1311
Selective growth of InP on patterned, nonplanar InP substrates by low-pressure organometallic vapor phase epitaxy Rong -Ting HuangChing -Long JiangStanley W. Zehr OriginalPaper Pages: 1313 - 1317
Failure analysis of leakage current in plastic encapsulated packages S. J. HuF. T. Cheang OriginalPaper Pages: 1319 - 1322
Raman study of defects in a GaAs buffer layer grown by low-temperature molecular beam epitaxy R. S. BergNergis MavalvalaF. W. Smith OriginalPaper Pages: 1323 - 1330
