Abstract
The application of Futurrex IC1-200 spin-on glass as an insulator for InP metal-insu-lator-semiconductor (MIS) structures including InP MIS capacitors and InP MIS field-effect transistors (MISFET’s) was investigated. Preliminary measurements of the elec-trical properties of the spin-on glass were performed using Si MIS structures with the spin-on glass insulator layer. It was found that the spin-on glass which is subjected to a final curing treatment utilizing a rapid-thermal annealing at 600° C for 5 sec in a O2 ambient exhibits the best electrical properties. However, it was demonstrated by sec-ondary ion mass spectroscopy that when done on InP, the 600° C rapid-thermal an-nealing resulted in the outdiffusion of indium and phosphorus into the spin-on glass. The change in the spin-on glass electrical characteristics due to this outdiffusion re-sulted in an instability in the InP MISFET operation.
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Mii, T., Casey, H.C. Properties of spin-on glass as an insulator for InP metal-insulator-semiconductor structures. J. Electron. Mater. 19, 1281–1288 (1990). https://doi.org/10.1007/BF02673343
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DOI: https://doi.org/10.1007/BF02673343