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The formation of elevated barrier height Schottky diodes to inp and In0.53Ga0.47as using thin, excimer laser-deposited Cd interlayers

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Abstract

Much recent attention has been paid to elevating the barrier height of contacts to InP and In0.53Ga0. 47As via the formation of a thin, intermediate layer between the semicon-ductor and a conventionally deposited, highly conductive contact layer. Here, we report on the use of thin (∼200Å) excimer laser photodeposited Cd as an interlayer between these semiconductors and Au overlayers in order to raise the barrier height of the re-sulting diodes. Current-voltage measurements of ideal Schottky diodes fabricated using this process yield barrier heights of 0.70 eV and 0.55 eV to InP and In0.53Ga0. 47As, re-spectively. The photodeposition process has been integrated with conventional clean room processing resulting in Au/Cd/In0.53Ga0. 47As transistors with high transconductances (∼200 mS/mm) and operating frequencies (f max ∼ 30 GHz). X-ray photoelectron spec-troscopy of thin Cd photodeposits on InP shows that the process produces an interfacial (∼10Å thick) Cd-InP reaction zone covered by metallic Cd.

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Authors and Affiliations

  1. Microelectronics Sciences Laboratories, Columbia University, 10027, New York, NY

    Thomas J. Licata, Michael T. Schmidt, Dragan V. Podlesnik, Vladimir Liberman & Richard M. Osgood

  2. 07701, Bellcore, Red Bank, NJ

    Winston K. Chan & Rajaram Bhat

Authors
  1. Thomas J. Licata
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  2. Michael T. Schmidt
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  3. Dragan V. Podlesnik
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  4. Vladimir Liberman
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  5. Richard M. Osgood
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  6. Winston K. Chan
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  7. Rajaram Bhat
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Licata, T.J., Schmidt, M.T., Podlesnik, D.V. et al. The formation of elevated barrier height Schottky diodes to inp and In0.53Ga0.47as using thin, excimer laser-deposited Cd interlayers. J. Electron. Mater. 19, 1239–1246 (1990). https://doi.org/10.1007/BF02673338

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  • DOI: https://doi.org/10.1007/BF02673338

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