The lattice position of diffused Zn in InP W. N. LennardM. L. SwansonF. R. Shepherd OriginalPaper Pages: 1 - 3
Low-temperature growth of InSb by vacuum MOCVD using TEln and SbH3 O. SugiuraH. KamedaM. Matsumura OriginalPaper Pages: 11 - 14
The effect of gas phase growth parameters on the composition of InGaAs in the hydride VPE process D. N. Buckley OriginalPaper Pages: 15 - 20
Molecular beam epitaxy of GaAsxP1-xusing lowenergy P+ Ion Beam S. MarunoY. MorishitaH. Ogata OriginalPaper Pages: 21 - 24
Compositional dependence of infrared phonon parameters for Hg1-xCdxTe D. RajavelS. Perkowitz OriginalPaper Pages: 25 - 27
Properties of laser-induced thermochemical etching of InP Li DingQiu MingxinKuang Zhong OriginalPaper Pages: 29 - 32
Raman scattering in-depth evaluation of recrystallized silicon-on-oxide using different wavelength excitation M. KanamoriH. Tsuya OriginalPaper Pages: 33 - 37
Growth and characterization of germanium and boron doped silicon epitaxial films Simon S. AngJames F. Garvin OriginalPaper Pages: 39 - 43
Steady state and transient photoconductivity in amorphous thin films of Se0.8Te0.2 S. K. TripathiA. Kumar OriginalPaper Pages: 45 - 51
Effect of surface encapsulation and As4 overpressure on Si diffusion and impurity-induced layer disordering in GaAs, AlxGa1-xAs, and AlxGa1-xAs-GaAs quantum well heterostructures L. J. GuidoW. E. PlanoP. Gavrilovic OriginalPaper Pages: 53 - 56
Physical, thermal and optical characterization of rhodium(III1) acetylacetonate S. PostonA. Reisman OriginalPaper Pages: 57 - 61
Resistivity and hall-effect topography on photoexcited semi-insulating GaAs E. PimentelD. C. Look OriginalPaper Pages: 63 - 66
Use of tertiarybutylphosphine for the growth of InP and GaAs1-xPx C. H. ChenD. S. CaoG. B. Stringfellow OriginalPaper Pages: 67 - 73
The effects of doping impurities and substrate crystallin on the formation of nickel suicides on silicon at 200–280° C L. J. ChenC. M. DolandC. W. Nieh OriginalPaper Pages: 75 - 81
A new high temperature stable bipolar VLSI metallization V. F. DrobnyS. R. Early OriginalPaper Pages: 83 - 86
Substrate orientation and processing effects on GaAs/Si misorientation in GaAs-on-Si grown by MBE R. J. MatyiJ. W. LeeH. F. Schaake OriginalPaper Pages: 87 - 93
Characterisation of ar ion laser induced cvd silicon films: deposition, crystallographic texture and phosphorous doping S. K. RoyA. S. VengurlekarS. Chandrasekhar Erratum Pages: 94 - 94