Abstract
The properties of laser-induced thermochemical etching of InP were investigated with a visible multiline Ar+ laser and reactant gas Cl2 for the first time. Two thresholds of light intensity were observed, respectively, in surfacial writing, etching and rapid penetrating etching. Explanations of the relationship between the etching rate and light intensity are given.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
D. J. Ehrlich, R. M. Osgood, Jr. and T. F. Deutsch, Appl. Phys. Lett.38, 1018 (1981).
A. W. Tucker and M. Birnbaum, IEEE Electron Device Lett.EDL-4, 39 (1983).
D. J. Ehrlich, R. M. Osgood, Jr. and T. F. Deutsch, Appl. Phys. Lett.36, 698 (1980).
S. A. Kokorowoki, G. L. Olson and L. D. Hess, in Proc. of the Materials Research Society Annual Meeting, Boston, Massachusetts, 1980, “Laser and Electron-Beam Solid Interactions and Materials Processing,” ed. by J. F. Gibbons, L. D. Hess, T. W. Sigmon (North-Holland, New York, 1981) Vol.1. P.139.
Y. Rytz-Froidevaux, R. P. Salathe and H. H. Gilgen, Appl. Phys. A37, 121 (1985).
Mikio Jakai, Jun Tokuda, Hiroyuki Nakai Kenji Gamo and Susumu Namba, Jpn. J. Appl. Phys.22, L757 (1983).
M. Lax, J. Appl. Phys.48, 3919 (1977).
M. Lax, Appl. Phys. Lett.33, 786 (1978).
Martin F. Von Allmen, in “Laser Annealing of Semiconductors,” ed. by J. M. Poate and James W. Mayer. (Academic, New York, 1982) P.47.
H. Weiss, Ann. Phys.4, 121 (1959).
J. R. Drabble and H. J. Goldsmid, “Thermal Conduction in Semiconductors,” (Pergamon, Oxford, 1961).
A. F. Joffe, Can. J. Phys.34, 1342 (1956).
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Ding, L., Mingxin, Q. & Zhong, K. Properties of laser-induced thermochemical etching of InP. J. Electron. Mater. 17, 29–32 (1988). https://doi.org/10.1007/BF02652229
Received:
Revised:
Issue Date:
DOI: https://doi.org/10.1007/BF02652229