Abstract
Recrystallized silicon-on-oxide were analyzed by laser Raman scattering spectroscopy. By changing the excitation laser wavelength, the in-depth stress profile was obtained. The in-depth stress change was strongly dependent on recrystallization power. Recrystallized silicon structures were confirmed by cross sectional TEM observations. Dependent on recrystallization power, silicon film structures changed from small grain or small and large two grain layers to continuous large grain films.
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Kanamori, M., Tsuya, H. Raman scattering in-depth evaluation of recrystallized silicon-on-oxide using different wavelength excitation. J. Electron. Mater. 17, 33–37 (1988). https://doi.org/10.1007/BF02652230
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DOI: https://doi.org/10.1007/BF02652230