The use of metalorganic chemical vapor deposition to prepare device quality Ga(AsP) strained-layer superlattices R. M. Biefeld OriginalPaper Pages: 193 - 199
The growth and characterization of device quality InP/ Ga1-xinxasyp1-y double heterostructures by atmospheric-pressure MOVPE using trimethylindium A. MirceaR. MelletA-M. Pougnet OriginalPaper Pages: 205 - 213
The effect of isolated dislocations on substrate and device properties in low-dislocation czochralski GaAs A. T. HunterH. KimuraH. V. Winston OriginalPaper Pages: 215 - 219
The determination of impact ionization coefficients in ln0.2Ga0.8As/GaAs strained-layer superlattice mesa photodiodes G. E. BulmanT. E. ZipperianL. R. Dawson OriginalPaper Pages: 221 - 227
The effect of hydrogen on boron diffusion in SiO2 Yosi Shacham-DiamandWilliam G. Oldham OriginalPaper Pages: 229 - 233
The growth of GaAs, AIGaAs, InP and InGaAs by chemical beam epitaxy using group III and V alkyls W. T. Tsang OriginalPaper Pages: 235 - 245
Reduction of dislocations in GaAs and InP epitaxial layers by quasi ternary growth and its effect on device performance H. BenekingP. NaroznyK. H. Goetz OriginalPaper Pages: 247 - 250
Electrical and photo-luminescence properties of ZnSe epitaxial layers grown on GaAs (100) by atmospheric pressure MOVPE: The role of substrate temperature Guanghan FanJ Iwan DaviesJohn O Williams OriginalPaper Pages: 251 - 255