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The use of metalorganic chemical vapor deposition to prepare device quality Ga(AsP) strained-layer superlattices

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Abstract

Strained-layer superlattices (SLS’s), which consist of thin (<300 Å) alternating layers of Ga(AsP) and GaAs or GaP, have been prepared by metalorganic chemical vapor deposition (MOCVD). Transmission electron microscopy and x-ray diffraction of the SLS’s indicate that the layers are coherently strained and dislocation free. The mismatch between these very thin layers is totally accommodated by strain for misfits of one percent or less. The layer thickness for the binaries and the ternary is controlled by the TMG flow while the solid composition for the ternary is determined by the arsine/phosphine ratio. The solid composition for a fixed arsine/phosphine ratio is a function of temperature and arsine partial pressure. Uniformly doped SLS’s have properties similar to the ternary of the same composition. A photodiode has been prepared from a GaAs0.2P0.8/ GaP SLS with a leakage current of 155 × 10-6 A/cm2 at -5V and a quantum efficiency of 40% at 420 nm.

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  1. Sandia National Laboratories, 87185, Albuquerque, NM

    R. M. Biefeld

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Biefeld, R.M. The use of metalorganic chemical vapor deposition to prepare device quality Ga(AsP) strained-layer superlattices. J. Electron. Mater. 15, 193–199 (1986). https://doi.org/10.1007/BF02659631

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  • DOI: https://doi.org/10.1007/BF02659631

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