Abstract
We report on recent developments of the atmospheric pressure OMVPE of InP and InxGa1-xASyP1-y using trimethylindium, trimethylgallium, phosphine and arsine. The use of diffuser organometallic sources significantly increased the accuracy of quaternary composition control. This control was achieved in the whole range of quaternary light emitting wavelengths from 1.20 micrometers up to the ternary GaInAs limit. The influence of the carrier gas was further investigated: device-quality heterostructures were obtained for either of the three carrier gases hydrogen, helium and argon. The experimental conditions for growing quaternaries with a given composition agree well with a simple model. This work has permitted the realization of 1.3 micrometer laser heterostructures with low threshold current density.
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This work was partially presented at the 1985 Electron Materials Conference, Boulder (Colo. USA), June 1985.
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Mircea, A., Mellet, R., Rose, B. et al. The growth and characterization of device quality InP/ Ga1-xinxasyp1-y double heterostructures by atmospheric-pressure MOVPE using trimethylindium. J. Electron. Mater. 15, 205–213 (1986). https://doi.org/10.1007/BF02659633
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DOI: https://doi.org/10.1007/BF02659633