1. The relationship between moisture resistance and epoxy molding compounds in integrated circuits

   • Osamu Nakagawa
   • Ikuo Sasaki
   • Toshinobu Banjo

   OriginalPaper Pages: 231 - 250

2. CVD-SiO₂ and plasma-SiN_x films as Zn diffusion masks for GaAs

   • C. Blaauw
   • A. J. SpringThorpe
   • B. Emmerstorfer

   OriginalPaper Pages: 251 - 262

3. Thin films of ZrO₂ metal organic chemical vapor deposition

   • L. Ben-Dor
   • A. Elshtein
   • J. Shappir

   OriginalPaper Pages: 263 - 272

4. Thin film Al₂O₃:TiO₂ composite dielectric

   • S. K. Tiku
   • G. C. Smith

   OriginalPaper Pages: 273 - 279

5. Influence of alloy composition, substrate temperature, and doping concentration on electrical properties of Si-doped n-Al_x Ga_1−x As grown by molecular beam epitaxy

   • H. Künzel
   • K. Ploog
   • B. L. Zhou

   OriginalPaper Pages: 281 - 308

6. Electronic transport properties of tungsten silicide thin films

   • T. L. Martin
   • V. Malhotra
   • J. E. Mahan

   OriginalPaper Pages: 309 - 325

7. Titanium nitride as a diffusion barrier between nickel silicide and aluminum

   • M. Finetti
   • I. Suni
   • M. -A. Nicolet

   OriginalPaper Pages: 327 - 340

8. Junction solar cells made with molecular beam glow discharge bombardment

   • E. J. Caine
   • E. J. Charlson

   OriginalPaper Pages: 341 - 372

9. Neutralization of electrically active aluminum in recrystallized silicon-on-sapphire films

   • I. Golecki
   • R. L. Maddox
   • K. M. Stika

   OriginalPaper Pages: 373 - 399

10. The role of defects in the diffusion and activation of impurities in ion implanted semiconductors

    • C. W. Farley
    • B. G. Streetman

    OriginalPaper Pages: 401 - 436

11. The effects of the growth temperature on Al_xGa_l-xAs (0≤ x ≤0.37) LED materials grown by OM-VPE

    • M. J. Tsai
    • M. M. Tashima
    • R. L. Moon

    OriginalPaper Pages: 437 - 446