Abstract
Composite dielectric thin films of various combinations of Al2O3 and TiO2 were deposited by e-beam evaporation and co-sputtering. Composition control and dielectric properties are found to be superior for the co-sputtered films. A composition near 55 mole percent TiO2 gives optimum dielectric properties, dielectric constant of 40 and dissipation near .01.
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Tiku, S.K., Smith, G.C. Thin film Al2O3:TiO2 composite dielectric. J. Electron. Mater. 13, 273–279 (1984). https://doi.org/10.1007/BF02656680
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DOI: https://doi.org/10.1007/BF02656680