The relationship between moisture resistance and epoxy molding compounds in integrated circuits Osamu NakagawaIkuo SasakiToshinobu Banjo OriginalPaper Pages: 231 - 250
CVD-SiO2 and plasma-SiNx films as Zn diffusion masks for GaAs C. BlaauwA. J. SpringThorpeB. Emmerstorfer OriginalPaper Pages: 251 - 262
Thin films of ZrO2 metal organic chemical vapor deposition L. Ben-DorA. ElshteinJ. Shappir OriginalPaper Pages: 263 - 272
Influence of alloy composition, substrate temperature, and doping concentration on electrical properties of Si-doped n-Alx Ga1−x As grown by molecular beam epitaxy H. KünzelK. PloogB. L. Zhou OriginalPaper Pages: 281 - 308
Electronic transport properties of tungsten silicide thin films T. L. MartinV. MalhotraJ. E. Mahan OriginalPaper Pages: 309 - 325
Titanium nitride as a diffusion barrier between nickel silicide and aluminum M. FinettiI. SuniM. -A. Nicolet OriginalPaper Pages: 327 - 340
Junction solar cells made with molecular beam glow discharge bombardment E. J. CaineE. J. Charlson OriginalPaper Pages: 341 - 372
Neutralization of electrically active aluminum in recrystallized silicon-on-sapphire films I. GoleckiR. L. MaddoxK. M. Stika OriginalPaper Pages: 373 - 399
The role of defects in the diffusion and activation of impurities in ion implanted semiconductors C. W. FarleyB. G. Streetman OriginalPaper Pages: 401 - 436
The effects of the growth temperature on AlxGal-xAs (0≤ x ≤0.37) LED materials grown by OM-VPE M. J. TsaiM. M. TashimaR. L. Moon OriginalPaper Pages: 437 - 446
