High-Resistivity Gallium Antimonide Produced by Metal–Organic Vapor-Phase Epitaxy R. V. LevinA. S. VlasovB. V. Pushnyi NONELECTRONIC PROPERTIES OF SEMICONDUCTORS (ATOMIC STRUCTURE, DIFFUSION) 04 December 2019 Pages: 1563 - 1567
Effect of Irradiation with 15-MeV Protons on Low Frequency Noise in Power SiC MOSFETs A. A. LebedevM. E. LevinshteinL. Fursin ELECTRONIC PROPERTIES OF SEMICONDUCTORS 04 December 2019 Pages: 1568 - 1572
Recombination of Mobile Carriers Across Boron Excited Levels in Silicon at Low Temperatures T. T. Muratov ELECTRONIC PROPERTIES OF SEMICONDUCTORS 04 December 2019 Pages: 1573 - 1577
On the Characteristic Features of the Impurity Energy Spectrum in Arsenides I. K. KamiliovM. I. DaunovR. K. Arslanov ELECTRONIC PROPERTIES OF SEMICONDUCTORS 04 December 2019 Pages: 1578 - 1583
First-Principles Investigation of Electronic Properties of GaAsxSb1 –x Ternary Alloys A. K. SinghDevesh ChandraAmit Rathi ELECTRONIC PROPERTIES OF SEMICONDUCTORS 04 December 2019 Pages: 1584 - 1592
Temperature Dependence of the Band Gap of MnAgIn7S12 Single Crystals I. V. BodnarB. T. ChanG. P. Yablonskii ELECTRONIC PROPERTIES OF SEMICONDUCTORS 04 December 2019 Pages: 1593 - 1596
Features of the Temperature Dependences of the Photoconductivity of Organometallic CH3NH3PbI3 Perovskite Films D. V. AmasevA. R. TameevA. G. Kazanskii SURFACES, INTERFACES, AND THIN FILMS 04 December 2019 Pages: 1597 - 1602
The Effect of Various Annealing Cooling Rates on Electrical and Morphological Properties of TiO2 Thin Films S. AsalzadehK. Yasserian SURFACES, INTERFACES, AND THIN FILMS 04 December 2019 Pages: 1603 - 1607
Excitonic Effects and Impurity–Defect Emission in GaAs/AlGaAs Structures Used for the Production of Mid-IR Photodetectors V. S. KrivobokD. A. LitvinovL. N. Grigor’eva SEMICONDUCTOR STRUCTURES, LOW-DIMENSIONAL SYSTEMS, AND QUANTUM PHENOMENA 04 December 2019 Pages: 1608 - 1616
Electron–Phonon Interaction in Quantum Wells Based on Uniaxial Materials A. Yu. MaslovO. V. Proshina SEMICONDUCTOR STRUCTURES, LOW-DIMENSIONAL SYSTEMS, AND QUANTUM PHENOMENA 04 December 2019 Pages: 1617 - 1621
Carbon Nanotubes and Graphene Powder based Multifunctional Pressure, Displacement and Gradient of Temperature Sensors Muhammad Tariq Saeed ChaniKhasan S. KarimovAbdullah M. Asiri SEMICONDUCTOR STRUCTURES, LOW-DIMENSIONAL SYSTEMS, AND QUANTUM PHENOMENA 04 December 2019 Pages: 1622 - 1629
De Haas–van Alphen Oscillations of the Silicon Nanostructure in Weak Magnetic Fields at Room Temperature. Density of States V. V. RomanovV. A. KozhevnikovN. T. Bagraev SEMICONDUCTOR STRUCTURES, LOW-DIMENSIONAL SYSTEMS, AND QUANTUM PHENOMENA 04 December 2019 Pages: 1629 - 1632
Thermodynamic Description of Oscillations of the Magnetization of a Silicon Nanostructure in Weak Fields at Room Temperature. Density of States V. V. RomanovV. A. KozhevnikovN. T. Bagraev SEMICONDUCTOR STRUCTURES, LOW-DIMENSIONAL SYSTEMS, AND QUANTUM PHENOMENA 04 December 2019 Pages: 1633 - 1636
Effect of the Samarium Impurity on the Local Structure of Se95Te5 Chalcogenide Glassy Semiconductor and Current Passage through Al–Se95Te5〈Sm〉–Te Structures S. U. AtaevaS. I. MekhtievaA. S. Huseynova AMORPHOUS, VITREOUS, AND ORGANIC SEMICONDUCTORS 04 December 2019 Pages: 1637 - 1645
Charge Transfer in Gap Structures Based on the Chalcogenide System (As2Se3)100 –xBix R. A. CastroS. D. KhaninA. A. Kononov AMORPHOUS, VITREOUS, AND ORGANIC SEMICONDUCTORS 04 December 2019 Pages: 1646 - 1650
Parameters of Lateral and Unsteady Cord Currents in a Cylindrical Chalcogenide Glassy Semiconductor N. V. SovtusK. D. Mynbaev AMORPHOUS, VITREOUS, AND ORGANIC SEMICONDUCTORS 04 December 2019 Pages: 1651 - 1655
Synthesis and Characterization of Semiconductor Polymer Doped with FeCl3 and I2 Bouabdallah DahoClaudio FontanesiAbdelkader Belfedal AMORPHOUS, VITREOUS, AND ORGANIC SEMICONDUCTORS 04 December 2019 Pages: 1656 - 1664
Effects of Doping of Lead Sulfide with Silver on the Lattice and Optical Properties of Pb1 –xAgxS Solid Solutions S. I. Sadovnikov MICROCRYSTALLINE, NANOCRYSTALLINE, POROUS, AND COMPOSITE SEMICONDUCTORS 04 December 2019 Pages: 1665 - 1671
Edge Doping in Graphene Devices on SiO2 Substrates G. Yu. VasilyevaD. SmirnovR. J. Haug CARBON SYSTEMS 04 December 2019 Pages: 1672 - 1676
Current–Voltage Characteristics of Composite Graphene–Nanotube Films with Irregular Nanotube Arrangement O. E. GlukhovaM. M. SlepchenkovP. V. Barkov CARBON SYSTEMS 04 December 2019 Pages: 1677 - 1682
Modification of Carbon-Nanotube Wettability by Ion Irradiation A. I. MorkovkinE. A. VorobyevaA. A. Shemukhin CARBON SYSTEMS 04 December 2019 Pages: 1683 - 1687
On the Application of Schottky Contacts in the Microwave, Extremely High Frequency, and THz Ranges N. A. TorkhovL. I. BabakA. A. Kokolov PHYSICS OF SEMICONDUCTOR DEVICES 04 December 2019 Pages: 1688 - 1698
InGaAlP/GaAs Injection Lasers of the Orange Optical Range (~600 nm) A. M. NadtochiyYu. M. ShernyakovN. N. Ledentsov PHYSICS OF SEMICONDUCTOR DEVICES 04 December 2019 Pages: 1699 - 1704
Ga(In)AsP Lateral Nanostructures as the Optical Component of GaAs-Based Photovoltaic Converters L. B. KarlinaA. S. VlasovA. V. Ankudinov PHYSICS OF SEMICONDUCTOR DEVICES 04 December 2019 Pages: 1705 - 1708
GaAs-Based Laser Diode with InGaAs Waveguide Quantum Wells N. V. DikarevaB. N. ZvonkovA. A. Dubinov PHYSICS OF SEMICONDUCTOR DEVICES 04 December 2019 Pages: 1709 - 1711
Deposition of Amorphous and Microcrystalline Films of Silicon by the Gas-Jet Plasma-Chemical Method V. G. ShchukinV. O. KonstantinovR. G. Sharafutdinov FABRICATION, TREATMENT, AND TESTING OF MATERIALS AND STRUCTURES 04 December 2019 Pages: 1712 - 1716
Metal-Assisted Photochemical Etching of N- and Ga-Polar GaN Epitaxial Layers D. V. MokhovT. N. BerezovskayaA. D. Bouravleuv FABRICATION, TREATMENT, AND TESTING OF MATERIALS AND STRUCTURES 04 December 2019 Pages: 1717 - 1723
InxAl1 –xN Solid Solutions: Composition Stability Issues V. N. BrudnyiM. D. VilisovaL. E. Velikovskiy FABRICATION, TREATMENT, AND TESTING OF MATERIALS AND STRUCTURES 04 December 2019 Pages: 1724 - 1730