Abstract
A series of undoped GaAs/AlxGa1 –xAs multiple quantum well heterostructures, whose doped analogs are used for the production of photodetectors operating in the spectral range 8–12 μm, is fabricated by molecular-beam epitaxy. For the heterostructures, the spectral position of absorption lines corresponding to the allowed transitions between quantum-confined electron and hole levels in GaAs layers is established. The influence of impurity–defect states on the luminescence and absorption spectra of quantum wells is studied. The excitonic corrections for the allowed transitions are determined in relation to the quantum-well width and the aluminum content in the barrier layers. The role of excitonic effects in restoring the structure of single-electron states from interband-absorption spectra (luminescence-excitation spectra) and the relationship between these states and the working region of IR photodetectors based on GaAs/AlxGa1 –xAs quantum wells are discussed.
![](http://media.springernature.com/m312/springer-static/image/art%3A10.1134%2FS1063782619160139/MediaObjects/11453_2019_2490_Fig1_HTML.gif)
![](http://media.springernature.com/m312/springer-static/image/art%3A10.1134%2FS1063782619160139/MediaObjects/11453_2019_2490_Fig2_HTML.gif)
![](http://media.springernature.com/m312/springer-static/image/art%3A10.1134%2FS1063782619160139/MediaObjects/11453_2019_2490_Fig3_HTML.gif)
![](http://media.springernature.com/m312/springer-static/image/art%3A10.1134%2FS1063782619160139/MediaObjects/11453_2019_2490_Fig4_HTML.gif)
![](http://media.springernature.com/m312/springer-static/image/art%3A10.1134%2FS1063782619160139/MediaObjects/11453_2019_2490_Fig5_HTML.gif)
![](http://media.springernature.com/m312/springer-static/image/art%3A10.1134%2FS1063782619160139/MediaObjects/11453_2019_2490_Fig6_HTML.gif)
Similar content being viewed by others
REFERENCES
A. Rogalski, P. Martyniuk, and M. Kopytko, Appl. Phys. Rev. 4, 031304 (2017).
S. D. Gunapala, D. R. Rhiger, and C. Jagadish, Advances in Infrared Photodetectors in Semiconductors and Semimetals (Academic, New York, 2011).
H. Schneider and H. C. Liu, Quantum Well Infrared Photodetectors (Springer, Berlin, 2007).
H. X. Wang, Z. L. Fu, D. X. Shao, Z. Z. Zhang, C. Wang, Z. Y. Tan, X. G. Guo, and J. C. Cao, Appl. Phys. Lett. 113, 171107 (2018).
S. V. Bandara, S. D. Gunapala, J. K. Liu, E. M. Luong, J. M. Mumolo, W. Hong, D. K. Sengupta, and M. J. McKelvey, Appl. Phys. Lett. 72, 2427 (1998).
M. Helm, Semicond. Semimet. 62, 1 (1999).
B. F. Levine, J. Appl. Phys. 74, R1 (1993).
K. K. Choi, D. P. Forrai, D. W. Endre, and J. Sun, IEEE J. Quant. Electron. 45, 1255 (2009).
A. Nedelcu, Y. Creten, V. Guériaux, A. Berurier, V. Bria, N. B. l’Isle, and C. V. Hoof, Proc. SPIE 7826, 78261K (2010).
P. B. Vigneron, S. Pirotta, I. Carusotto, N. L. Tran, G. Biasiol, J. M. Manceau, A. Bousseksou, and R. Colombelli, Appl. Phys. Lett. 114, 131104 (2019).
K. K. Choi, M. D. Jhabvala, J. Sun, C. A. Jhabvala, A. Waczynski, and K. Olve, Appl. Phys. Lett. 103, 201113 (2013).
W. Wu, A. Bonakdar, and H. Mohseni, Appl. Phys. Lett. 96, 161107 (2010).
Z. H. Chen, S. Hellström, Z. Y. Yu, M. Qiu, and Y. Fu, Appl. Phys. Lett. 100, 043502 (2012).
L. B. Luo, L. H. Zeng, C. Xie, Y. Q. Yu, F. X. Liang, C. Y. Wu, L. Wang, and L. G. Hu, Sci. Rep. 4, 3914 (2014).
Y. Liu, R. Cheng, L. Liao, H. Zhou, J. Bai, G. Liu, L. Liu, Y. Huang, and X. Duan, Nat. Commun. 2, 579 (2011).
D. V. Kazantsev and E. A. Kazantseva, JETP Lett. 107, 512 (2018).
D. V. Kazantsev, E. V. Kuznetsov, S. V. Timofeev, A. V. Shelaev, and E. A. Kazantseva, Phys. Usp. 60, 259 (2017).
C. F. Klingshirn, Semiconductor Optics (Springer Science, New York, 2012).
J. S. Blakemore, J. Appl. Phys. 53, R123 (1982).
V. S. Krivobok, S. N. Nikolaev, V. S. Bagaev, A. A. Pruchkina, E. E. Onishchenko, S. A. Kolosov, Yu. V. Klevkov, and M. L. Skorikov, J. Appl. Phys. 119, 055704 (2016).
V. S. Krivobok, S. N. Nikolaev, S. I. Chentsov, E. E. Onishchenko, V. S. Bagaev, V. I. Kozlovskii, S. V. Sorokin, I. V. Sedova, S. V. Gronin, and S. V. Ivanov, JETP Lett. 104, 110 (2016).
N. R. Jungwirth, H. S. Chang, M. Jiang, and G. D. Fuchs, ACS Nano 10, 1210 (2016).
V. S. Krivobok, S. N. Nikolaev, S. I. Chentsov, E. E. Onishchenko, A. A. Pruchkina, V. S. Bagaev, A. A. Silina, and N. A. Smirnova, J. Lumin. 200, 240 (2018).
H. Mathieu, P. Lefebvre, and P. Christol, Phys. Rev. B 46, 4092 (1992).
Funding
The study was supported by the Russian Foundation for Basic Research, project no. 18-29-20122-mk.
Author information
Authors and Affiliations
Corresponding author
Ethics declarations
The authors declare that they have no conflict of interest.
Additional information
Translated by E. Smorgonskaya
Rights and permissions
About this article
Cite this article
Krivobok, V.S., Litvinov, D.A., Nikolaev, S.N. et al. Excitonic Effects and Impurity–Defect Emission in GaAs/AlGaAs Structures Used for the Production of Mid-IR Photodetectors. Semiconductors 53, 1608–1616 (2019). https://doi.org/10.1134/S1063782619160139
Received:
Revised:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1134/S1063782619160139