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InxAl1 –xN Solid Solutions: Composition Stability Issues

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Abstract

The phase diagrams of the InxAl1 –xN solid solutions and conditions for their growth by magnetron sputtering and molecular beam and metalorganic vapor phase epitaxy are analyzed. The mutual equilibrium solubility in a wide range of compositions of the thick solution layers is near zero. Elastic misfit stresses in the InxAl1 –xN thin layers narrow the unstable immiscibility gap. By optimizing the growth conditions, one can obtain high-quality homogeneous InxAl1 –xN films for fabricating barrier layers in InAlN/GaN high electron mobility transistors.

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Funding

This study was supported by the Applied Research and Experimental Development Project “Study and Development of a Technique for Fabricating Microwave Monolithic Integrated Circuits Based on InAlN/GaN Heterostructures for Space Applications”, agreement no. 14.578.21.0240 dated September 29, 2017). Unique Project Identifier RFMEFI 57817X240.

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  1. National Research Tomsk State University, 634050, Tomsk, Russia

    V. N. Brudnyi, M. D. Vilisova & L. E. Velikovskiy

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  1. V. N. Brudnyi
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Correspondence to V. N. Brudnyi.

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Translated by E. Bondareva

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Brudnyi, V.N., Vilisova, M.D. & Velikovskiy, L.E. InxAl1 –xN Solid Solutions: Composition Stability Issues. Semiconductors 53, 1724–1730 (2019). https://doi.org/10.1134/S1063782619160061

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