1. Electrical Breakdown in Pure n- and p-Si

   • V. F. Bannaya
   • E. V. Nikitina

   Electronic Properties of Semiconductors 12 March 2018 Pages: 273 - 277

2. Isoelectronic Oxygen Centers and Conductivity of CdS Crystals Compared with PbS Crystals

   • N. K. Morozova
   • B. N. Miroshnikov

   Electronic Properties of Semiconductors 12 March 2018 Pages: 278 - 281

3. Electronic Structure of Four-Element Clathrates of the Ba–Zn–Si–Ge System

   • N. A. Borshch
   • S. I. Kurganskii

   Electronic Properties of Semiconductors 12 March 2018 Pages: 282 - 286

4. Optical Transitions in ZnSe and CdTe Crystals with Involvement of the Cation d Bands

   • V. V. Sobolev
   • D. A. Perevoshchikov

   Electronic Properties of Semiconductors 12 March 2018 Pages: 287 - 293

5. Mechanism of the Generation of Donor–Acceptor Pairs in Heavily Doped n-ZrNiSn with the Ga Acceptor Impurity

   • V. A. Romaka
   • P. -F. Rogl
   • D. Kaczorowski

   Electronic Properties of Semiconductors 12 March 2018 Pages: 294 - 304

6. Deep Radiation-Induced Defect Centers Created by a Fast Neutron Flux in CdZnTe Single Crystals

   • S. V. Plyatsko
   • L. V. Rashkovetskyi

   Electronic Properties of Semiconductors 12 March 2018 Pages: 305 - 309

7. Formation of Radiation Defects by Proton Braking in Lightly Doped n- and p-SiC Layers

   • V. V. Kozlovski
   • A. E. Vasil’ev
   • A. A. Lebedev

   Electronic Properties of Semiconductors 12 March 2018 Pages: 310 - 315

8. Surface Nanostructures Forming during the Early Stages of the Metal-Assisted Chemical Etching of Silicon. Optical Properties of Silver Nanoparticles

   • Yu. A. Zharova
   • V. A. Tolmachev
   • S. I. Pavlov

   Surfaces, Interfaces, and Thin Films 12 March 2018 Pages: 316 - 319

9. Influence of the Thermal Conditions of Fabrication and Treatment on the Optical Properties of In₂O₃ Films

   • A. A. Tikhii
   • Yu. M. Nikolaenko
   • I. V. Zhikharev

   Surfaces, Interfaces, and Thin Films 12 March 2018 Pages: 320 - 323

10. Specific Features of the Optical Characteristics of Porous Silicon and Their Modification by Chemical Treatment of the Surface

    • A. S. Lenshin

    Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors 12 March 2018 Pages: 324 - 330

11. Effect of Low γ-Radiation Doses on the Optical Properties of Porous Silicon

    • D. I. Bilenko
    • O. Ya. Belobrovaya
    • I. T. Yagudin

    Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors 12 March 2018 Pages: 331 - 334

12. Electron–Electron and Electron–Phonon Interactions in Graphene on a Semiconductor Substrate: Simple Estimations

    • S. Yu. Davydov

    Carbon Systems 12 March 2018 Pages: 335 - 340

13. Optimal Doping of Diode Current Interrupters

    • A. S. Kyuregyan

    Physics of Semiconductor Devices 12 March 2018 Pages: 341 - 347

14. Schottky-Barrier Model Nonlinear in Surface-State Concentration and Calculation of the I–V Characteristics of Diodes Based on SiC and Its Solid Solutions in the Composite Charge-Transport Model

    • V. I. Altukhov
    • A. V. Sankin
    • S. V. Filippova

    Physics of Semiconductor Devices 12 March 2018 Pages: 348 - 351

15. Field-Effect Transistor Based on the Proton Conductivity of Graphene Oxide and Nafion Films

    • V. A. Smirnov
    • A. D. Mokrushin
    • Yu. A. Dobrovolskii

    Physics of Semiconductor Devices 12 March 2018 Pages: 352 - 358

16. Mechanism and Behavior of the Light Flux Decrease in Light-Emitting Diodes Based on AlGaN/InGaN/GaN Structures with Quantum Wells upon Prolonged Direct-Current Flow of Various Densities

    • F. I. Manyakhin

    Physics of Semiconductor Devices 12 March 2018 Pages: 359 - 365

17. Modification of Photovoltaic Laser-Power (λ = 808 nm) Converters Grown by LPE

    • V. P. Khvostikov
    • S. V. Sorokina
    • M. Z. Shvarts

    Physics of Semiconductor Devices 12 March 2018 Pages: 366 - 370

18. Influence of Heat Dissipation Conditions on the Characteristics of Concentrator Photoelectric Modules

    • A. V. Andreeva
    • N. Yu. Davidyuk
    • A. V. Chekalin

    Physics of Semiconductor Devices 12 March 2018 Pages: 371 - 375

19. Photoluminescence Studies of Si-Doped Epitaxial GaAs Films Grown on (100)- and (111)A-Oriented GaAs Substrates at Lowered Temperatures

    • G. B. Galiev
    • E. A. Klimov
    • P. P. Maltsev

    Fabrication, Treatment, and Testing of Materials and Structures 12 March 2018 Pages: 376 - 382

20. Formation of Cu₂O and ZnO Crystal Layers by Magnetron Assisted Sputtering and Their Optical Characterization

    • V. F. Agekyan
    • E. V. Borisov
    • N. G. Filosofov

    Fabrication, Treatment, and Testing of Materials and Structures 12 March 2018 Pages: 383 - 389

21. Formation of a Stepped Si(100) Surface and Its Effect on the Growth of Ge Islands

    • M. Yu. Esin
    • A. I. Nikiforov
    • O. P. Pchelyakov

    Fabrication, Treatment, and Testing of Materials and Structures 12 March 2018 Pages: 390 - 393

22. Formation of Macropores in n-Si upon Anodization in an Organic Electrolyte

    • E. V. Astrova
    • N. E. Preobrazhenskiy
    • S. I. Pavlov

    Fabrication, Treatment, and Testing of Materials and Structures 12 March 2018 Pages: 394 - 410