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Isoelectronic Oxygen Centers and Conductivity of CdS Crystals Compared with PbS Crystals

  • Electronic Properties of Semiconductors
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Abstract

The influence of oxygen on the electrical properties of PbS are well known. The goal of this study is to compare and reveal this phenomenon in CdS(O) single crystals, which we have studied in detail previously. The experiments are performed for CdS single crystals with a known oxygen concentration, deviation from stoichiometry, and definite set of intrinsic point defects. They allow us to confirm the results described for PbS and clarify their nature. It is shown that the phenomenon is based on the capture of free charge carriers— electrons—by acceptor-like isoelectronic OS centers with the subsequent formation of associates having a complex structure. Previous conclusions on the dissolution mechanism of oxygen in CdS with deviations from stoichiometry are confirmed. Variations in the electrical properties in oxygen-activated PbS(O), similarly to CdS(O), showed that isoelectronic oxygen centers OS are present in lead sulfide.

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Authors and Affiliations

  1. National Research University “Moscow Power Engineering Institute”, Moscow, 111250, Russia

    N. K. Morozova & B. N. Miroshnikov

  2. Institute of Nanotechnologies of Microelectronics, Russian Academy of Sciences, Moscow, 119991, Russia

    N. K. Morozova & B. N. Miroshnikov

Authors
  1. N. K. Morozova
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  2. B. N. Miroshnikov
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Correspondence to N. K. Morozova.

Additional information

Original Russian Text © N.K. Morozova, B.N. Miroshnikov, 2018, published in Fizika i Tekhnika Poluprovodnikov, 2018, Vol. 52, No. 3, pp. 295–298.

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Morozova, N.K., Miroshnikov, B.N. Isoelectronic Oxygen Centers and Conductivity of CdS Crystals Compared with PbS Crystals. Semiconductors 52, 278–281 (2018). https://doi.org/10.1134/S106378261803017X

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  • DOI: https://doi.org/10.1134/S106378261803017X

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