1. Field Characteristics of Spin-Torque Diode Sensitivity in the Presence of a Bias Current

   • A. F. Popkov
   • N. E. Kulagin
   • K. A. Zvezdin

   BASIC RESEARCH 29 January 2019 Pages: 1909 - 1914

   

2. Electron Transport by a Transverse Acoustoelectric Stoneley Wave

   • A. K. Morocha
   • A. S. Rozhkov

   BASIC RESEARCH 29 January 2019 Pages: 1915 - 1918

3. Predicting the Optical Properties of Matrix Composites Containing Spherical Inclusions with Metal Shells

   • I. V. Lavrov

   BASIC RESEARCH 29 January 2019 Pages: 1919 - 1924

   

4. Quantum Efficiency of Gallium Nitride–Based Heterostructures with GaInN Quantum Wells

   • E. N. Vigdorovich

   BASIC RESEARCH 29 January 2019 Pages: 1925 - 1930

   

5. Measuring the Effective Masses of the Electrical Conductivity and Density of States by Contactless Microwave Means

   • D. A. Usanov
   • A. E. Postelga
   • K. A. Gurov

   BASIC RESEARCH 29 January 2019 Pages: 1931 - 1935

   

6. Effect of the Plasma Functionalization of Carbon Nanotubes on the Formation of a Carbon Nanotube–Nickel Oxide Composite Electrode Material

   • A. V. Alekseyev
   • E. A. Lebedev
   • D. G. Gromov

   ELECTRONICS MATERIALS 29 January 2019 Pages: 1936 - 1941

   

7. Determining the Concentration of Free Electrons in n-InSb from Far-Infrared Reflectance Spectra with Allowance for Plasmon–Phonon Coupling

   • I. M. Belova
   • A. G. Belov
   • A. P. Lysenko

   ELECTRONICS MATERIALS 29 January 2019 Pages: 1942 - 1946

   

8. Studying the Effect of Electrically Active Impurities Coming from Trimethylgallium Synthesized by Different Means on the Electrophysical Characteristics of Gallium Arsenide Epitaxial Layers

   • M. V. Revin
   • A. P. Kotkov
   • B. G. Gribov

   ELECTRONICS MATERIALS 29 January 2019 Pages: 1947 - 1952

9. Dependence of Mechanical Stresses in Silicon Nitride Films on the Mode of Plasma-Enhanced Chemical Vapor Deposition

   • A. V. Novak
   • V. R. Novak
   • E. E. Gusev

   TECHNOLOGICAL PROCESSES AND ROUTES 29 January 2019 Pages: 1953 - 1957

   

10. Using Combined Optical Techniques to Control the Shallow Etching Process

    • A. D. Volokhovskiy
    • N. N. Gerasimenko
    • D. S. Petrakov

    TECHNOLOGICAL PROCESSES AND ROUTES 29 January 2019 Pages: 1958 - 1962

    

11. Characteristics of Amorphous As₂S₃ Semiconductor Films Obtained via Spin Coating

    • Hang Thi Nguyen
    • A. O. Yakubov
    • S. A. Kozyukhin

    TECHNOLOGICAL PROCESSES AND ROUTES 29 January 2019 Pages: 1963 - 1968

    

12. Investigating the RTA Treatment of Ohmic Contacts to n-Layers of Heterobipolar Nanoheterostructures

    • V. I. Egorkin
    • V. E. Zemlyakov
    • V. I. Garmash

    TECHNOLOGICAL PROCESSES AND ROUTES 29 January 2019 Pages: 1969 - 1972

    

13. A Physical Model of an SOI Field-Effect Hall Sensor

    • M. A. Korolev
    • M. I. Pavlyuk
    • S. S. Devlikanova

    ELEMENTS OF INTEGRAL ELECTRONICS 29 January 2019 Pages: 1973 - 1975

    

14. Patterns of Variation in the External Quantum Efficiency of InGaN/GaN Green LEDs during Accelerated Tests

    • V. A. Sergeev
    • I. V. Frolov
    • O. A. Radaev

    ELEMENTS OF INTEGRAL ELECTRONICS 29 January 2019 Pages: 1976 - 1981

    

15. Analysis of the Switching Characteristics of MRAM Cells Based on Materials with Uniaxial Anisotropy

    • Iu. A. Iusipova

    ELEMENTS OF INTEGRAL ELECTRONICS 29 January 2019 Pages: 1982 - 1988

    

16. Erratum to: Nonuniversal Scaling Behavior of Conductivity Peak Widths in the Quantum Hall Effect in InGaAs/InAlAs Structures

    • S. V. Gudina
    • Yu. G. Arapov
    • A. N. Vinichenko

    Erratum 29 January 2019 Pages: 1989 - 1989