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Characteristics of Amorphous As2S3 Semiconductor Films Obtained via Spin Coating

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Abstract

Centrifugation is used in fabricating, e.g., films with large areas and/or thicknesses of several micrometers. However, it has yet to be widely employed for chalcogenide compounds, due to their relatively weak solubility in most solvents. Determining the optimum conditions for preparing solutions of chalcogenide compounds and obtaining films via centrifugation is therefore of great interest. Specific features of amorphous arsenic sulfide (As2S3) films prepared via the centrifugation of solutions in n-butylamine have been studied. These films were characterized by means of X-ray diffraction analysis, IR spectroscopy, atomic-force microscopy and Raman spectroscopy. It was shown that amorphous As2S3 films have a greater elasticity modulus than those of analogous composition produced via thermal evaporation in vacuum, or As2S3 glass. A structural model based on arsenic sulfide clusters whose surfaces are bound by negatively and positively charged ions is used to explain the experimental results obtained in this work. DC measurements show that the amorphous films exhibit semiconductor-type conductivity. Their room temperature conductivity is ~10−15 S/cm, which indicates good dielectric properties. The films are optically transparent starting from the yellow spectral range, making them promising functional materials for engineering applications in optics and photonics.

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REFERENCES

  1. S. Raoux and M. Wuttig, Phase Change Materials: Science and Applications (Springer Science, New York, 2009).

    Book  Google Scholar 

  2. A. V. Kolobov and J. Tominaga, Chalcogenides. Metastability and Phase Change Phenomena (Springer, Berlin, Heidelberg, 2012).

    Google Scholar 

  3. S. Kasap, J. B. Frey, G. Bele, et al., Sensors 11, 5112 (2011).

    Article  Google Scholar 

  4. A. I. Popov, Physics and Technology of Disordered Semiconductors (Mosk. Energ. Inst., Moscow, 2008) [in Russian].

    Google Scholar 

  5. A. Zakery and S. R. Elliot, Optical Nonlinearities in Chalcogenide Glasses and their Application (Springer, Berlin, 2007).

    Google Scholar 

  6. D. Bimberg, Semiconductor Nanostructures (Springer, Berlin, Heidelberg, 2008).

    Book  Google Scholar 

  7. P. Petkov, W. Kulisch, and C. Popov, Nanostructured Materials for Advanced Technological Applications (Springer, Netherlands, 2009).

    Google Scholar 

  8. H. Fu and S. W. Tsang, Nanoscale 4, 2187 (2012).

    Article  ADS  Google Scholar 

  9. M.-R. Gao, Y.-F. Xu, J. Jianga, and S.-H. Yu, Chem. Soc. Rev. 42, 2986 (2013).

    Article  Google Scholar 

  10. A. Qurashi, Metal Chalcogenide Nanostructures for Renewable Energy Applications (Wiley, New York, 2015).

    Google Scholar 

  11. H. Gleiter, Acta Mater. 48, 1 (2000).

    Article  Google Scholar 

  12. Glossary of Nanotechnology and Related Terms, Ed. by S. V. Kalyuzhnyi (Fizmatlit, Moscow, 2010) [in Russian].

    Google Scholar 

  13. Z. U. Borisova, Chalcogenide Semiconductor Glasses (Leningr. Gos. Univ., Leningrad, 1983).

    Google Scholar 

  14. G. C. Chern and I. Lauks, J. Appl. Phys., No. 53, 6979 (1982).

  15. Ch. Markos, S. N. Yannopoulos, and K. Vlachos, Opt. Express 20, 1481 (2013).

    Google Scholar 

  16. G. C. Chern and I. Lauks, J. Appl. Phys. 54, 2701 (1983).

    Article  ADS  Google Scholar 

  17. K. H. Norian, G. C. Chern, and I. Lauks, J. Appl. Phys. 55, 3795 (1984).

    Article  ADS  Google Scholar 

  18. K. Palka, T. Syrovy, S. Schroter, et al., Opt. Mater. Express 4, 384 (2014).

    Article  ADS  Google Scholar 

  19. S. Shutina, M. Klebanov, V. Lyubin, et al., Thin Solid Films 261, 263 (1995).

    Article  ADS  Google Scholar 

  20. Y. Zha, M. Waldmann, and C. B. Arnold, Opt. Mater. Express. 3, 1259 (2013).

    Article  ADS  Google Scholar 

  21. Nguen Tkhi Khang, E. V. Tekshina, P. I. Lazarenko, et al., Ross. Tekhnol. Zh. 5, 51 (2017).

    Google Scholar 

  22. A. Feltz, Amorphous Inorganic Materials and Glasses (Wiley, New York, 1993; Mir, Moscow, 1986).

  23. N. Starbov, K. Starbova, and J. Dikova, J. Non-Cryst. Solids 139, 222 (1992).

    Article  ADS  Google Scholar 

  24. http://www.chem.msu.su/rus/teaching/tarasevich/Tarasevich_IR_tables_29-02-2012.pdf. Accessed November 1, 2017.

  25. K. Nakamoto, Infrared and Raman Spectra of Inorganic and Coordination Compounds (Mir, Moscow, 1991; Wiley, New York, 1986).

  26. S. N. Yannopoulos, F. Kyriazis, and I. P. Chochliouros, Opt. Lett. 36, 534 (2011).

    Article  ADS  Google Scholar 

  27. Lingmin Liao and Chunxu Pan, Soft Nanosci. Lett. 1, 16 (2011).

    Google Scholar 

  28. N. T. Shchurova and N. D. Savchenko, J. Optoelectron. Adv. Mater. 3, 491 (2001).

    Google Scholar 

  29. N. F. Mott and E. A. Davis, Electron Procuresses in Non-Crystalline Materials (Clarendon, Oxford, 1979; Mir, Moscow, 1982).

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ACKNOWLEDGMENTS

The authors are grateful to O.S. Zilova (National Research University of Electronic Technology) for performing our microhardness measurements, S.A. Klimin (Institute of Spectroscopy, Russian Academy of Sciences) for obtaining our Raman spectra, and Cand. Sci. (Chem.) O.V. Boitsova (Institute of General and Inorganic Chemistry, Russian Academy of Sciences) for her assistance in performing our X-ray phase analysis of the films.

This work was supported by Basic Research Program no. 1 of the Russian Academy of Sciences, “Nanostructures: Physics, Chemistry, Biology, and the Fundamentals of Technologies.” It was performed on equipment at the Microsystems Technology and Electronic Hardware Components resource center at the National Research University of Electronic Technology, with support from the RF Ministry of Education and Science.

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Authors and Affiliations

  1. Moscow State Pedagogical University, 119435, Moscow, Russia

    Hang Thi Nguyen

  2. National Research University of Electronic Technology, 124498, Moscow, Russia

    A. O. Yakubov, P. I. Lazarenko, A. V. Volkova & A. A. Sherchenkov

  3. Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences, 119991, Moscow, Russia

    S. A. Kozyukhin

  4. National Research Tomsk State University, 634050, Tomsk, Russia

    S. A. Kozyukhin

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  1. Hang Thi Nguyen
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  2. A. O. Yakubov
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  3. P. I. Lazarenko
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  4. A. V. Volkova
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  5. A. A. Sherchenkov
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  6. S. A. Kozyukhin
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Correspondence to A. A. Sherchenkov.

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Translated by M. Tagirdzanov

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Hang Thi Nguyen, Yakubov, A.O., Lazarenko, P.I. et al. Characteristics of Amorphous As2S3 Semiconductor Films Obtained via Spin Coating. Semiconductors 52, 1963–1968 (2018). https://doi.org/10.1134/S1063782618150058

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  • DOI: https://doi.org/10.1134/S1063782618150058

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