Erratum to: Nonuniversal Scaling Behavior of Conductivity Peak Widths in the Quantum Hall Effect in InGaAs/InAlAs Structures

Gudina, S. V.; Arapov, Yu. G.; Ilchenko, E. V.; Neverov, V. N.; Savelyev, A. P.; Podgornykh, S. M.; Shelushinina, N. G.; Yakunin, M. V.; Vasil’evskii, I. S.; Vinichenko, A. N.

doi:10.1134/S1063782618150174

Erratum to: Nonuniversal Scaling Behavior of Conductivity Peak Widths in the Quantum Hall Effect in InGaAs/InAlAs Structures

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Published: 29 January 2019

Volume 52, page 1989, (2018)
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Erratum to: Nonuniversal Scaling Behavior of Conductivity Peak Widths in the Quantum Hall Effect in InGaAs/InAlAs Structures

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S. V. Gudina¹,
Yu. G. Arapov¹,
E. V. Ilchenko¹,
V. N. Neverov¹,
A. P. Savelyev¹,
S. M. Podgornykh^1,2,
N. G. Shelushinina¹,
M. V. Yakunin^1,2,
I. S. Vasil’evskii³ &
…
A. N. Vinichenko³

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The Original Article was published on 07 November 2018

The name of the third author should read E. V. Ilchenko.

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Authors and Affiliations

Miheev Institute of Metal Physics, Ural Branch, Russian Academy of Sciences, 620108, Yekaterinburg, Russia
S. V. Gudina, Yu. G. Arapov, E. V. Ilchenko, V. N. Neverov, A. P. Savelyev, S. M. Podgornykh, N. G. Shelushinina & M. V. Yakunin
Yeltsin Ural Federal University, 620002, Yekaterinburg, Russia
S. M. Podgornykh & M. V. Yakunin
National Research Nuclear University “MEPhI”, 115409, Moscow, Russia
I. S. Vasil’evskii & A. N. Vinichenko

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S. V. Gudina
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Yu. G. Arapov
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E. V. Ilchenko
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V. N. Neverov
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A. P. Savelyev
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S. M. Podgornykh
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N. G. Shelushinina
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M. V. Yakunin
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I. S. Vasil’evskii
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A. N. Vinichenko
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Correspondence to S. V. Gudina.

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Gudina, S.V., Arapov, Y.G., Ilchenko, E.V. et al. Erratum to: Nonuniversal Scaling Behavior of Conductivity Peak Widths in the Quantum Hall Effect in InGaAs/InAlAs Structures. Semiconductors 52, 1989 (2018). https://doi.org/10.1134/S1063782618150174

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Received: 17 December 2018
Accepted: 17 December 2018
Published: 29 January 2019
Issue Date: December 2018
DOI: https://doi.org/10.1134/S1063782618150174

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Erratum to: Nonuniversal Scaling Behavior of Conductivity Peak Widths in the Quantum Hall Effect in InGaAs/InAlAs Structures

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