1. Transport properties of cobalt monosilicide and its alloys at low temperatures

   • A. T. Burkov
   • S. V. Novikov
   • H. Reith

   XV International Conference “Thermoelectrics and Their Applications—2016”, St. Petersburg, November 15–16, 2016 04 June 2017 Pages: 689 - 691

2. On the density-of-states effective mass and charge-carrier mobility in heteroepitaxial films of bismuth telluride and Bi_0.5Sb_1.5Te₃ solid solution

   • L. N. Lukyanova
   • Yu. A. Boikov
   • V. A. Danilov

   XV International Conference “Thermoelectrics and Their Applications—2016”, St. Petersburg, November 15–16, 2016 04 June 2017 Pages: 692 - 694

3. Calculation of the thermal conductivity of nanostructured Bi₂Te₃ with the real phonon spectrum taken into account

   • L. P. Bulat
   • D. A. Pshenay-Severin
   • Yu. N. Parkhomenko

   XV International Conference “Thermoelectrics and Their Applications—2016”, St. Petersburg, November 15–16, 2016 04 June 2017 Pages: 695 - 698

4. Thermoelectric properties of InSb〈Zn〉 in nanoporous glass

   • O. N. Uryupin
   • A. A. Shabaldin

   XV International Conference “Thermoelectrics and Their Applications—2016”, St. Petersburg, November 15–16, 2016 04 June 2017 Pages: 699 - 701

5. Galvanomagnetic properties of Bi₈₅Sb₁₅ thin films on different substrates

   • V. A. Komarov
   • A. V. Suslov
   • M. V. Suslov

   XV International Conference “Thermoelectrics and Their Applications—2016”, St. Petersburg, November 15–16, 2016 04 June 2017 Pages: 702 - 705

6. Structure of thermoelectric films of higher manganese silicide on silicon according to electron microscopy data

   • A. S. Orekhov
   • T. S. Kamilov
   • V. V. Klechkovskaya

   XV International Conference “Thermoelectrics and Their Applications—2016”, St. Petersburg, November 15–16, 2016 04 June 2017 Pages: 706 - 709

7. Synthesis and electrical properties of Bi₂Te₃-based thermoelectric materials doped with Er, Tm, Yb, and Lu

   • M. N. Yapryntsev
   • R. A. Lyubushkin
   • O. N. Ivanov

   XV International Conference “Thermoelectrics and Their Applications—2016”, St. Petersburg, November 15–16, 2016 04 June 2017 Pages: 710 - 713

8. Preparation and properties of Zn₄Sb₃-based thermoelectric material

   • V. P. Panchenko
   • N. Yu. Tabachkova
   • E. A. Andreev

   XV International Conference “Thermoelectrics and Their Applications—2016”, St. Petersburg, November 15–16, 2016 04 June 2017 Pages: 714 - 717

9. Fe-based semiconducting Heusler alloys

   • V. V. Khovaylo
   • A. I. Voronin
   • R. Chatterdjee

   XV International Conference “Thermoelectrics and Their Applications—2016”, St. Petersburg, November 15–16, 2016 04 June 2017 Pages: 718 - 721

10. Simulation of the field-activated sintering of thermoelectric materials

    • L. P. Bulat
    • A. V. Novotelnova
    • D. Yerezhep

    XV International Conference “Thermoelectrics and Their Applications—2016”, St. Petersburg, November 15–16, 2016 04 June 2017 Pages: 722 - 724

11. Effect of anion and cation substitution in tungsten disulfide and tungsten diselenide on conductivity and thermoelectric power

    • G. E. Yakovleva
    • A. I. Romanenko
    • V. E. Fedorov

    XV International Conference “Thermoelectrics and Their Applications—2016”, St. Petersburg, November 15–16, 2016 04 June 2017 Pages: 725 - 728

12. On the morphology of the interlayer surface and micro-Raman spectra of layered films in topological insulators based on bismuth telluride

    • L. N. Lukyanova
    • A. Yu. Bibik
    • N. V. Nikonorov

    XV International Conference “Thermoelectrics and Their Applications—2016”, St. Petersburg, November 15–16, 2016 04 June 2017 Pages: 729 - 731

13. Polymorphic transformations and thermal expansion in AgCuSe_0.5(S,Te)_0.5 crystals

    • Y. I. Aliyev
    • Y. G. Asadov
    • S. H. Jabarov

    Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) 04 June 2017 Pages: 732 - 739

14. On a neutron detector based on TlInSe₂ crystals intercalated with a lithium isotope

    • I. V. Alekseev
    • E. A. Goremychkin
    • I. L. Sashin

    Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) 04 June 2017 Pages: 740 - 744

15. Study of the distribution profile of iron ions implanted into silicon

    • A. V. Kozhemyako
    • Yu. V. Balakshin
    • V. S. Chernysh

    Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) 04 June 2017 Pages: 745 - 750

16. Electrical properties of ZnSe crystals doped with transition elements

    • Yu. A. Nitsuk
    • Yu. F. Vaksman

    Electronic Properties of Semiconductors 04 June 2017 Pages: 751 - 754

17. Simulation of drift-diffusion transport of charge carriers in semiconductor layers with a fractal structure in an alternating electric field

    • S. Sh. Rekhviashvili
    • A. A. Alikhanov

    Electronic Properties of Semiconductors 04 June 2017 Pages: 755 - 759

18. Electron properties of surface InGaAs/InAlAs quantum wells with inverted doping on InP substrates

    • G. B. Galiev
    • A. N. Klochkov
    • P. P. Maltsev

    Electronic Properties of Semiconductors 04 June 2017 Pages: 760 - 765

19. Classical magnetoresistance of a two-component system induced by thermoelectric effects

    • P. S. Alekseev
    • I. V. Gornyi
    • M. A. Semina

    Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 04 June 2017 Pages: 766 - 776

20. Influence of the samarium impurity on the structure and surface morphology of Se₉₅Te₅ chalcogenide glassy semiconductor

    • S. I. Mekhtiyeva
    • S. U. Atayeva
    • V. Z. Zeynalov

    Amorphous, Vitreous, and Organic Semiconductors 04 June 2017 Pages: 777 - 782

21. Ab initio study of the electronic and vibrational structures of tetragonal cadmium diarsenide

    • Yu. M. Basalaev
    • A. V. Kopytov
    • Yu. I. Polygalov

    Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors 04 June 2017 Pages: 783 - 788

22. n-ZnO/p-CuI barrier heterostructure based on zinc-oxide nanoarrays formed by pulsed electrodeposition and SILAR copper-iodide films

    • N. P. Klochko
    • V. P. Kopach
    • A. N. Otchenashko

    Physics of Semiconductor Devices 04 June 2017 Pages: 789 - 797

23. On the limit of the injection ability of silicon p ⁺–n junctions as a result of fundamental physical effects

    • T. T. Mnatsakanov
    • M. E. Levinshtein
    • B. M. Seredin

    Physics of Semiconductor Devices 04 June 2017 Pages: 798 - 802

24. Simulation of reversely switched dynistors in modes with a lowered primary-ignition threshold

    • A. V. Gorbatyuk
    • B. V. Ivanov

    Physics of Semiconductor Devices 04 June 2017 Pages: 803 - 811

25. Influence of a static magnetic field on the formation of silicide phases in a Cu/Si(100) structure upon isothermal annealing

    • E. Yu. Buchin
    • V. V. Naumov
    • S. V. Vasilyev

    Fabrication, Treatment, and Testing of Materials and Structures 04 June 2017 Pages: 812 - 816

26. Effect of deposition temperature on the structure and optical properties of zinc-selenide films produced by radio-frequency magnetron sputtering

    • V. F. Kobziev
    • R. M. Zakirova
    • I. V. Fedotova

    Fabrication, Treatment, and Testing of Materials and Structures 04 June 2017 Pages: 817 - 822

27. On the detachment of thin ITO films from silicon substrate by microsecond laser irradiation

    • D. A. Kirienko
    • O. Ya. Berezina

    Fabrication, Treatment, and Testing of Materials and Structures 04 June 2017 Pages: 823 - 827

28. Structural features of Sm_1–x Eu _x S thin polycrystalline films

    • V. V. Kaminskii
    • S. M. Solov’ev
    • Shinji Hirai

    Fabrication, Treatment, and Testing of Materials and Structures 04 June 2017 Pages: 828 - 830