1. Features of the band structure and conduction mechanisms of n-HfNiSn heavily doped with Y

   • V. A. Romaka
   • P. Rogl
   • A. M. Horyn

   Electronic Properties of Semiconductors 10 February 2017 Pages: 139 - 145

2. Electrical properties and transport mechanisms in phase change memory thin films of quasi-binary-line GeTe–Sb₂Te₃ chalcogenide semiconductors

   • A. A. Sherchenkov
   • S. A. Kozyukhin
   • E. N. Redichev

   Electronic Properties of Semiconductors 10 February 2017 Pages: 146 - 152

3. On the thermopower and thermomagnetic properties of Er _x Sn_1–x Se solid solutions

   • J. I. Huseynov
   • M. I. Murguzov
   • E. M. Gojayev

   Electronic Properties of Semiconductors 10 February 2017 Pages: 153 - 157

4. Field diffusion in disordered organic materials under conditions of occupied deep states

   • V. R. Nikitenko
   • A. Yu. Kudrov

   Electronic Properties of Semiconductors 10 February 2017 Pages: 158 - 162

5. Magnetic-field-dependent microwave absorption in HgSe in weak magnetic fields

   • A. I. Veinger
   • T. V. Tisnek
   • V. I. Okulov

   Electronic Properties of Semiconductors 10 February 2017 Pages: 163 - 167

6. Raman scattering in InP doped by Be⁺-ion implantation

   • L. P. Avakyants
   • P. Yu. Bokov
   • A. V. Chervyakov

   Spectroscopy, Interaction with Radiation 10 February 2017 Pages: 168 - 172

7. Influence of the doping type and level on the morphology of porous Si formed by galvanic etching

   • O. V. Pyatilova
   • S. A. Gavrilov
   • A. A. Dudin

   Surfaces, Interfaces, and Thin Films 10 February 2017 Pages: 173 - 177

8. Study of silicon doped with zinc ions and annealed in oxygen

   • V. V. Privezentsev
   • E. P. Kirilenko
   • A. A. Batrakov

   Surfaces, Interfaces, and Thin Films 10 February 2017 Pages: 178 - 183

9. Study of the deposition features of the organic dye Rhodamine B on the porous surface of silicon with different pore sizes

   • A. S. Lenshin
   • P. V. Seredin
   • V. M. Kashkarov

   Surfaces, Interfaces, and Thin Films 10 February 2017 Pages: 184 - 188

10. Electroreflectance spectra from multiple InGaN/GaN quantum wells in the nonuniform electric field of a p–n junction

    • L. P. Avakyants
    • A. E. Aslanyan
    • A. V. Chervyakov

    Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 10 February 2017 Pages: 189 - 192

11. New mechanism of semiconductor polarization at the interface with an organic insulator

    • A. M. Yafyasov
    • V. B. Bogevolnov
    • V. Yu. Mikhailovski

    Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 10 February 2017 Pages: 193 - 195

12. Photoluminescence of amorphous and crystalline silicon nanoclusters in silicon nitride and oxide superlattices

    • D. V. Shuleiko
    • S. V. Zabotnov
    • P. K. Kashkarov

    Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 10 February 2017 Pages: 196 - 202

13. Nucleation of two-dimensional islands on Si (111) during high-temperature epitaxial growth

    • S. V. Sitnikov
    • S. S. Kosolobov
    • A. V. Latyshev

    Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 10 February 2017 Pages: 203 - 206

14. Structural studies of ZnS:Cu (5 at %) nanocomposites in porous Al₂O₃ of different thicknesses

    • R. G. Valeev
    • A. L. Trigub
    • A. N. Beltiukov

    Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors 10 February 2017 Pages: 207 - 212

15. Thermal stability of hydrogenated small-diameter carbon nanotubes

    • A. I. Podlivaev
    • L. A. Openov

    Carbon Systems 10 February 2017 Pages: 213 - 216

16. On the theory of adsorption on graphene-like compounds

    • S. Yu. Davydov

    Carbon Systems 10 February 2017 Pages: 217 - 224

17. Analysis of the impact of non-1D effects on the gate switch-on current in 4H-SiC thyristors

    • S. N. Yurkov
    • T. T. Mnatsakanov
    • J. W. Palmour

    Physics of Semiconductor Devices 10 February 2017 Pages: 225 - 231

18. On the effect of ballistic overflow on the temperature dependence of the quantum efficiency of InGaN/GaN multiple quantum well light-emitting diodes

    • I. A. Prudaev
    • V. V. Kopyev
    • V. L. Oleynik

    Physics of Semiconductor Devices 10 February 2017 Pages: 232 - 238

19. Electroluminescence of InAs/InAs(Sb)/InAsSbP LED heterostructures in the temperature range 4.2–300 K

    • K. D. Mynbaev
    • N. L. Bazhenov
    • V. E. Bougrov

    Physics of Semiconductor Devices 10 February 2017 Pages: 239 - 244

20. Increase the threshold voltage of high voltage GaN transistors by low temperature atomic hydrogen treatment

    • E. V. Erofeev
    • I. V. Fedin
    • Yu. N. Yuryev

    Physics of Semiconductor Devices 10 February 2017 Pages: 245 - 248

21. MSM optical detector on the basis of II-type ZnSe/ZnTe superlattice

    • P. I. Kuznetzov
    • S. V. Averin
    • V. M. Kotov

    Physics of Semiconductor Devices 10 February 2017 Pages: 249 - 253

22. Specific features of waveguide recombination in laser structures with asymmetric barrier layers

    • Yu. S. Polubavkina
    • F. I. Zubov
    • A. E. Zhukov

    Physics of Semiconductor Devices 10 February 2017 Pages: 254 - 259

23. Spatial redistribution of radiation in flip-chip photodiodes based on InAsSbP/InAs double heterostructures

    • A. L. Zakgeim
    • N. D. Il’inskaya
    • A. E. Cherniakov

    Physics of Semiconductor Devices 10 February 2017 Pages: 260 - 266

24. Study of the structural and optical properties of GaP(N) layers synthesized by molecular-beam epitaxy on Si(100) 4° substrates

    • N. V. Kryzhanovskaya
    • Yu. S. Polubavkina
    • A. E. Zhukov

    Fabrication, Treatment, and Testing of Materials and Structures 10 February 2017 Pages: 267 - 271

25. The temperature dependence of the conductivity peak values in the single and the double quantum well nanostructures n-InGaAs/GaAs after IR-illumination

    • Yu. G. Arapov
    • S. V. Gudina
    • M. V. Yakunin

    Fabrication, Treatment, and Testing of Materials and Structures 10 February 2017 Pages: 272 - 278