Abstract
The spatial distribution of the intensity of the emission caused by recombination appearing at a high injection level (up to 30 kA/cm2) in the waveguide layer of a GaAs/AlGaAs laser structure with GaInP and AlGaInAs asymmetric barrier layers is studied by means of near-field scanning optical microscopy. It is found that the waveguide luminescence in such a laser, which is on the whole less intense as compared to that observed in a similar laser without asymmetric barriers, is non-uniformly distributed in the waveguide, so that the distribution maximum is shifted closer to the p-type cladding layer. This can be attributed to the ability of the GaInP barrier adjoining the quantum well on the side of the n-type cladding layer to suppress the hole transport.
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Original Russian Text © Yu.S. Polubavkina, F.I. Zubov, E.I. Moiseev, N.V. Kryzhanovskaya, M.V. Maximov, E.S. Semenova, K. Yvind, L.V. Asryan, A.E. Zhukov, 2017, published in Fizika i Tekhnika Poluprovodnikov, 2017, Vol. 51, No. 2, pp. 263–268.
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Polubavkina, Y.S., Zubov, F.I., Moiseev, E.I. et al. Specific features of waveguide recombination in laser structures with asymmetric barrier layers. Semiconductors 51, 254–259 (2017). https://doi.org/10.1134/S1063782617020142
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DOI: https://doi.org/10.1134/S1063782617020142