1. Hybrid AlGaAs/GaAs/AlGaAs nanowires with a quantum dot grown by molecular beam epitaxy on silicon

   • G. E. Cirlin
   • I. V. Shtrom
   • I. P. Soshnikov

   XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 06 November 2016 Pages: 1421 - 1424

2. Modulation of intersubband light absorption and interband photoluminescence in double GaAs/AlGaAs quantum wells under strong lateral electric fields

   • R. M. Balagula
   • M. Ya. Vinnichenko
   • L. E. Vorobjev

   XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 06 November 2016 Pages: 1425 - 1430

3. Optical spectroscopy of a resonant Bragg structure with InGaN/GaN quantum wells

   • A. S. Bolshakov
   • V. V. Chaldyshev
   • A. F. Tsatsulnikov

   XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 06 November 2016 Pages: 1431 - 1434

4. Stimulated emission in heterostructures with double InGaAs/GaAsSb/GaAs quantum wells, grown on GaAs and Ge/Si(001) substrates

   • A. N. Yablonsky
   • S. V. Morozov
   • Z. F. Krasil’nik

   XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 06 November 2016 Pages: 1435 - 1438

5. Heavily doped GaAs:Te layers grown by MOVPE using diisopropyl telluride as a source

   • V. M. Daniltsev
   • E. V. Demidov
   • P. A. Yunin

   XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 06 November 2016 Pages: 1439 - 1442

6. Fabrication of MnGa/GaAs contacts for optoelectronics and spintronics applications

   • M. V. Dorokhin
   • D. A. Pavlov
   • S. Yu. Zubkov

   XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 06 November 2016 Pages: 1443 - 1448

7. Germanium laser with a hybrid surface plasmon mode

   • A. A. Dubinov

   XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 06 November 2016 Pages: 1449 - 1452

8. On the crystal structure and thermoelectric properties of thin Si_1–x Mn _x films

   • I. V. Erofeeva
   • M. V. Dorokhin
   • U. V. Usov

   XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 06 November 2016 Pages: 1453 - 1457

9. Terahertz absorption and emission upon the photoionization of acceptors in uniaxially stressed silicon

   • R. Kh. Zhukavin
   • K. A. Kovalevsky
   • V. N. Shastin

   XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 06 November 2016 Pages: 1458 - 1462

10. Anharmonic Bloch oscillations of electrons in electrically biased superlattices

    • K. A. Ivanov
    • E. I. Girshova
    • A. J. Gallant

    XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 06 November 2016 Pages: 1463 - 1468

11. Effect of thermal annealing on the photoluminescence of structures with InGaAs/GaAs quantum wells and a low-temperature GaAs layer δ-doped with Mn

    • I. L. Kalentyeva
    • O. V. Vikhrova
    • M. N. Drozdov

    XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 06 November 2016 Pages: 1469 - 1474

12. Electroluminescence from MIS silicon-based light emitters with arrays of self-assembled Ge(Si) nanoislands

    • V. B. Shmagin
    • S. N. Vdovichev
    • Z. F. Krasilnik

    XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 06 November 2016 Pages: 1475 - 1478

13. Anisotropy of the magnetocapacitance of structures based on PbSnTe:In/BaF₂ films

    • A. E. Klimov
    • V. S. Epov

    XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 06 November 2016 Pages: 1479 - 1487

14. Method for narrowing the directional pattern of an InGaAs/GaAs/AlGaAs multiwell heterolaser

    • N. V. Baydus
    • S. M. Nekorkin
    • A. A. Afonenko

    XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 06 November 2016 Pages: 1488 - 1492

15. Edge and defect luminescence of powerful ultraviolet InGaN/GaN light-emitting diodes

    • V. T. Shamirzaev
    • V. A. Gaisler
    • T. S. Shamirzaev

    XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 06 November 2016 Pages: 1493 - 1498

16. Effect of a low-temperature-grown GaAs layer on InAs quantum-dot photoluminescence

    • A. N. Kosarev
    • V. V. Chaldyshev
    • B. R. Semyagin

    XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 06 November 2016 Pages: 1499 - 1505

17. On the condensation of exciton polaritons in microcavities induced by a magnetic field

    • V. P. Kochereshko
    • D. V. Avdoshina
    • H. Mariette

    XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 06 November 2016 Pages: 1506 - 1510

18. Epitaxial GaN layers formed on langasite substrates by the plasma-assisted MBE method

    • D. N. Lobanov
    • A. V. Novikov
    • A. B. Gritsenko

    XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 06 November 2016 Pages: 1511 - 1514

19. Dynamic generation of spin-wave currents in hybrid structures

    • I. I. Lyapilin
    • M. S. Okorokov

    XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 06 November 2016 Pages: 1515 - 1520

20. Numerical simulation of the properties of solar cells based on GaPNAs/Si heterostructures and GaN nanowires

    • A. M. Mozharov
    • D. A. Kudryashov
    • I. S. Mukhin

    XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 06 November 2016 Pages: 1521 - 1525

21. Simulation of electron transport in GaAs/AlAs superlattices with a small number of periods for the THz frequency range

    • D. G. Pavelyev
    • A. P. Vasilev
    • V. M. Ustinov

    XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 06 November 2016 Pages: 1526 - 1531

22. Magnetospectroscopy of double HgTe/CdHgTe quantum wells

    • L. S. Bovkun
    • S. S. Krishtopenko
    • V. I. Gavrilenko

    XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 06 November 2016 Pages: 1532 - 1538

23. Study of the structures of cleaved cross sections by Raman spectroscopy

    • S. M. Plankina
    • O. V. Vikhrova
    • I. Yu. Pashenkin

    XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 06 November 2016 Pages: 1539 - 1542

24. Wide-aperture total absorption of a terahertz wave in a nanoperiodic graphene-based plasmon structure

    • O. V. Polischuk
    • V. S. Melnikova
    • V. V. Popov

    XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 06 November 2016 Pages: 1543 - 1547

25. Investigation of the thermal stability of metastable GeSn epitaxial layers

    • V. P. Martovitsky
    • Yu. G. Sadofyev
    • I. S. Vasil’evskii

    XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 06 November 2016 Pages: 1548 - 1553

26. Nanoheterostructures with improved parameters for high-speed and efficient plasmon-polariton light emitting Schottky diodes

    • N. V. Baidus
    • V. A. Kukushkin
    • S. M. Nekorkin

    XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 06 November 2016 Pages: 1554 - 1560