Abstract
The crystal structure, composition, and magnetic, and electric-transport properties of Mn x Ga y layers deposited onto a GaAs surface by pulsed laser deposition in a hydrogen atmosphere, pulsed laser deposition in vacuum, and electron-beam evaporation in vacuum are investigated. It is shown that the features of each technique affect the composition and crystal structure of the formed layers, and the degree of abruptness and crystalline quality of the heterointerface. Apparently, the composition and crystal structure are responsible for modification of the ferromagnetic properties. The defects in the heterointerface affect the properties of the Mn x Ga y /GaAs diode structure, in particular, the height of the Schottky diode potential barrier.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
Concepts in Spin Electronics, Ed. by S. Maekawa (Oxford Univ. Press, 2006).
Y. Xu, D. D. Awschalom, and J. Nitta, Handbook of Spintronics (Springer, Netherlansd, 2016).
P. Barate, S. Liang, T. T. Zhang, J. Frougier, M. Vidal, P. Renucci, X. Devaux, B. Xu, H. Jaffrés, J. M. George, X. Marie, M. Hehn, S. Mangin, Y. Zheng, T. Amand, B. Tao, X. F. Han, Z. Wang, and Y. Lu, Appl. Phys. Lett. 105, 012404 (2014).
L. J. Brillison, R. S. Bauer, R. Z. Bachrach, and G. Hansson, Phys. Rev. B 23, 6204 (1981).
C. Adelmann, J. L. Hilton, B. D. Schultz, S. McKernan, C. J. Palmstrom, X. Lou, H.-S. Chiang, and P. A. Crowell, Appl. Phys. Lett. 89, 112511 (2006).
A. W. Arins, H. F. Jurca, J. Zarpellon, Z. E. Fabrim, P. F. P. Fichtner, J. Varalda, W. H. Schreiner, and D. H. Mosca, J. Magn. Magn. Mater. 381, 83 (2015).
M. V. Dorokhin, D. A. Pavlov, A. I. Bobrov, Yu. A. Danilov, P. B. Demina, B. N. Zvonkov, A. V. Zdoroveishchev, A. V. Kudrin, N. V. Malekhonova, and E. I. Malysheva, Phys. Solid State 56, 2131 (2014).
E. Schuster, R. A. Brand, F. Stromberg, F.-Y. Lo, A. Ludwig, D. Reuter, A. D. Wieck, S. Hövel, N. C. Gerhardt, M. R. Hofmann, H. Wende, and W. Keune, J. Appl. Phys. 108, 063902 (2010).
A. Sinsarp, T. Manago, F. Takano, and H. Akinaga, J. Supercond. Nov. Magn. 20, 405 (2007).
E. S. Demidov, E. D. Pavlova, and A. I. Bobrov, JETP Lett. 96, 706 (2013).
B. N. Zvonkov, O. V. Vikhrova, Yu. A. Danilov, E. S. Demidov, P. B. Demina, M. V. Dorokhin, Yu. N. Drozdov, V. V. Podol’skii, and M. V. Sapozhnikov, J. Opt. Technol. 75, 389 (2008).
V. V. Podol’skii, V. P. Lesnikov, E. S. Demidov, D. E. Nikolichev, V. G. Beshenkov, S. N. Gusev, S. Yu. Zubkov, S. A. Levchuk, and M. V. Sapozhnikov, J. Surf. Invest.: X-ray, Synchrotron Neutron Tech. 4, 366 (2010).
P. J. Flanders, J. Appl. Phys. 63, 3940 (1988).
E. H. Rhoderick, Metal–Semiconductor Contacts (Clarendon, Oxford, 1978).
M. V. Dorokhin, P. B. Demina, N. V. Baidus, Yu. A. Danilov, B. N. Zvonkov, and M. M. Prokof’eva, J. Surf. Invest.: X-ray, Synchrotron Neutron Tech. 4, 390 (2010).
Author information
Authors and Affiliations
Corresponding author
Additional information
Original Russian Text © M.V. Dorokhin, D.A. Pavlov, A.I. Bobrov, Yu.A. Danilov, V.P. Lesnikov, B.N. Zvonkov, A.V. Zdoroveyshchev, A.V. Kudrin, P.B. Demina, Yu.V. Usov, D.E. Nikolichev, R.N. Kryukov, S.Yu. Zubkov, 2016, published in Fizika i Tekhnika Poluprovodnikov, 2016, Vol. 50, No. 11, pp. 1463–1468.
Rights and permissions
About this article
Cite this article
Dorokhin, M.V., Pavlov, D.A., Bobrov, A.I. et al. Fabrication of MnGa/GaAs contacts for optoelectronics and spintronics applications. Semiconductors 50, 1443–1448 (2016). https://doi.org/10.1134/S1063782616110087
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1134/S1063782616110087