1. Spin-transfer torque and specific features of magnetic-state switching in vacuum tunnel nanostructures

   • G. D. Demin
   • A. F. Popkov
   • N. A. Dyuzhev

   Basic Research 17 December 2015 Pages: 1679 - 1683

2. Zinc diffusion upon isovalent substitution in gallium phosphide

   • E. N. Vigdorovich

   Materials for Electronic Engineering 17 December 2015 Pages: 1684 - 1688

3. Charge-carrier transport mechanisms in composites containing carbon-nanotube inclusions

   • D. A. Usanov
   • A. V. Skripal’
   • A. V. Romanov

   Materials for Electronic Engineering 17 December 2015 Pages: 1689 - 1694

4. On the size-dependent magnetism and all-optical magnetization switching of transition-metal silicide nanostructures

   • G. I. Glushkov
   • A. V. Tuchin
   • L. A. Bityutskaya

   Materials for Electronic Engineering 17 December 2015 Pages: 1695 - 1697

5. Spin valves based on Mn₇₅Ir₂₅ antiferromagnet with controllable functional parameters

   • M. A. Milyaev
   • L. I. Naumova
   • V. V. Ustinov

   Nanotechnology 17 December 2015 Pages: 1698 - 1701

6. Modeling of the structural fragments of substances with nanoscale dispersion

   • S. V. Pishchanskiy

   Materials for Electronic Engineering 17 December 2015 Pages: 1702 - 1709

7. Luminescence properties of Si-containing porous matrix–PbS nanoparticle systems

   • S. A. Tarasov
   • O. A. Aleksandrova
   • P. G. Travkin

   Materials for Electronic Engineering 17 December 2015 Pages: 1710 - 1713

8. Study of the structure of a thin aluminum layer on the vicinal surface of a gallium arsenide substrate by high-resolution electron microscopy

   • M. V. Lovygin
   • N. I. Borgardt
   • A. V. Tsikunov

   Materials for Electronic Engineering 17 December 2015 Pages: 1714 - 1717

9. Analytical approach to calculating the effective dielectric characteristics of heterogeneous textured materials with randomly shaped inclusions

   • M. I. Zavgorodnyaya
   • I. V. Lavrov
   • A. G. Fokin

   Materials for Electronic Engineering 17 December 2015 Pages: 1718 - 1726

10. A study of the effect of the structure of plasma-chemical silicon nitride on its masking properties

    • V. I. Garmash
    • V. I. Egorkin
    • S. Yu. Shapoval

    Microelectronic and Nanoelectronic Technology 17 December 2015 Pages: 1727 - 1730

11. Study of the technology of the plasma nanostructuring of silicon to form highly efficient emission structures

    • V. A. Galperin
    • E. P. Kitsyuk
    • A. A. Shamanaev

    Microelectronic and Nanoelectronic Technology 17 December 2015 Pages: 1731 - 1734

12. Study of silicon strip waveguides with diffraction gratings and photonic crystals tuned to a wavelength of 1.5 µm

    • M. Yu. Barabanenkov
    • A. F. Vyatkin
    • O. V. Trofimov

    Microelectronic Devices and Systems 17 December 2015 Pages: 1735 - 1738

13. Magnetic-field sensors based on anisotropic magnetoresistive thin-film structures for operation in a wide temperature range

    • N. A. Djuzhev
    • N. S. Mazurkin
    • M. Yu. Chinenkov

    Microelectronic Devices and Systems 17 December 2015 Pages: 1739 - 1742

14. Study of modification methods of probes for critical-dimension atomic-force microscopy by the deposition of carbon nanotubes

    • O. A. Ageev
    • Al. V. Bykov
    • O. G. Tsukanova

    Nanotechnology 17 December 2015 Pages: 1743 - 1748

15. Fast-response biological sensors based on single-layer carbon nanotubes modified with specific aptamers

    • K. F. Akhmadishina
    • I. I. Bobrinetskiy
    • R. D. Aidarkhanov

    Nanotechnology 17 December 2015 Pages: 1749 - 1753