High-frequency detection of the formation and stabilization of a radiation-induced defect cluster in semiconductor structures A. S. PuzanovS. V. ObolenskiyD. G. Paveliev XIX Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 10–14, 2015 10 December 2015 Pages: 1537 - 1544
Temperature scaling in the quantum-Hall-effect regime in a HgTe quantum well with an inverted energy spectrum Yu. G. ArapovS. V. GudinaS. A. Dvoretsky XIX Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 10–14, 2015 10 December 2015 Pages: 1545 - 1549
Universal properties of materials with the Dirac dispersion relation of low-energy excitations A. P. ProtogenovE. V. Chulkov XIX Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 10–14, 2015 10 December 2015 Pages: 1550 - 1556
On the role of negative effective masses in the formation of the conductivity of semiconductor superlattices Yu. Yu. Romanova XIX Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 10–14, 2015 10 December 2015 Pages: 1557 - 1563
Sn-enriched Ge/GeSn nanostructures grown by MBE on (001) GaAs and Si wafers Yu. G. SadofyevV. P. MartovitskyI. S. Vasil’evskii XIX Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 10–14, 2015 10 December 2015 Pages: 1564 - 1570
Optimization of InGaP/GaAs/InGaAs heterolasers with tunnel-coupled waveguides I. V. SamartsevV. Ya. AleshkinS. M. Nekorkin XIX Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 10–14, 2015 10 December 2015 Pages: 1571 - 1574
Nonradiative recombination of excitons in semimagnetic quantum dots A. V. Chernenko XIX Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 10–14, 2015 10 December 2015 Pages: 1575 - 1581
Initial growth stages of Si–Ge–Sn ternary alloys grown on Si (100) by low-temperature molecular-beam epitaxy A. R. TuktamyshevV. I. MashanovS. A. Teys XIX Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 10–14, 2015 10 December 2015 Pages: 1582 - 1586
Plasmon resonance in new AsSb–AlGaAs metal–semiconductor metamaterials V. I. UshanovV. V. ChaldyshevB. R. Semyagin XIX Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 10–14, 2015 10 December 2015 Pages: 1587 - 1591
Effect of the deposition of cobalt on the optoelectronic properties of quantum-confined In(Ga)As/GaAs heteronanostructures N. S. VolkovaA. P. GorshkovS. B. Levichev XIX Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 10–14, 2015 10 December 2015 Pages: 1592 - 1595
Polarization and spectral characteristics of the two-photon luminescence from colloidal gold nanoparticles excited by tunable laser radiation D. A. YashuninA. I. KorytinA. N. Stepanov XIX Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 10–14, 2015 10 December 2015 Pages: 1596 - 1600
CoPt ferromagnetic injector in light-emitting Schottky diodes based on InGaAs/GaAs nanostructures A. V. ZdoroveyshchevM. V. DorokhinD. E. Nikolichev XIX Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 10–14, 2015 10 December 2015 Pages: 1601 - 1604
Impurity-induced photoconductivity of narrow-gap Cadmium–Mercury–Telluride structures D. V. KozlovV. V. RumyantsevF. Teppe XIX Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 10–14, 2015 10 December 2015 Pages: 1605 - 1610
Investigation of magnetoabsorption at different temperatures in HgTe/CdHgTe quantum-well heterostructures in pulsed magnetic fields V. V. PlatonovYu. B. KudasovS. A. Dvoretsky XIX Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 10–14, 2015 10 December 2015 Pages: 1611 - 1615
Cyclotron resonance in InAs/AlSb quantum wells in magnetic fields up to 45 T K. E. SpirinS. S. KrishtopenkoV. I. Gavrilenko XIX Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 10–14, 2015 10 December 2015 Pages: 1616 - 1622
Long-wavelength injection lasers based on Pb1–x Sn x Se alloys and their use in solid-state spectroscopy K. V. MaremyaninA. V. IkonnikovV. I. Gavrilenko XIX Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 10–14, 2015 10 December 2015 Pages: 1623 - 1626
Exchange enhancement of the electron g-factor in a two-dimensional semimetal in HgTe quantum wells L. S. BovkunS. S. KrishtopenkoV. I. Gavrilenko XIX Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 10–14, 2015 10 December 2015 Pages: 1627 - 1633
On estimations of the melting temperature of graphene-like compounds S. Yu. Davydov Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) 10 December 2015 Pages: 1634 - 1639
Electron conductivity in GeTe and GeSe upon ion implantation of Bi Ya. G. Fedorenko Electronic Properties of Semiconductors 10 December 2015 Pages: 1640 - 1644
Simulation of the polarization current of geminate pairs in an organic material with Gaussian disorder N. A. KorolevV. R. Nikitenko Electronic Properties of Semiconductors 10 December 2015 Pages: 1645 - 1650
Temperature dependences of the photoluminescence intensities of centers in silicon implanted with erbium and oxygen ions N. A. SobolevK. F. Shtel’makhE. I. Shek Spectroscopy, Interaction with Radiation 10 December 2015 Pages: 1651 - 1654
Conductivity over localized states of the system of (TlInSe2)1–x (TlGaTe2) x solid solutions R. M. SardarlyO. A. SamedovE. M. Kerimova Surfaces, Interfaces, and Thin Films 10 December 2015 Pages: 1655 - 1660
Spatially correlated two-dimensional arrays of semiconductor and metal quantum dots in GaAs-based heterostructures V. N. NevedomskiyN. A. BertB. R. Semyagin Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 10 December 2015 Pages: 1661 - 1664
Increase in the Shockley–Read–Hall recombination rate in InGaN/GaN QWs as the main mechanism of the efficiency droop in LEDs at high injection levels N. I. BochkarevaYu. T. RebaneYu. G. Shreter Physics of Semiconductor Devices 10 December 2015 Pages: 1665 - 1670
Photoelectric properties of photodiodes based on InAs/InAsSbP heterostructures with photosensitive-area diameters of 0.1–2.0 mm I. A. AndreevO. Yu. SerebrennikovaYu. P. Yakovlev Physics of Semiconductor Devices 10 December 2015 Pages: 1671 - 1677
