Abstract
Low-temperature photoluminescence in n-Cz-Si after the implantation of erbium ions at an elevated temperature and subsequent implantation of oxygen ions at room temperature is studied. So-called X and W centers formed from self-interstitial silicon atoms, H and P centers containing oxygen atoms, and Er centers containing Er3+ ions are observed in the photoluminescence spectra. The energies of enhancing and quenching of photoluminescence for these centers are determined. These energies are determined for the first time for X and H centers. In the case of P and Er centers, the values of the energies practically coincide with previously published data. For W centers, the energies of the enhancing and quenching of photoluminescence depend on the conditions of the formation of these centers.
Similar content being viewed by others
References
W. L. Ng, M. A. Lourenco, R. M. Gwilliam, S. Ledain, G. Shao, and K. P. Homewood, Nature 410, 192 2001.
N. A. Sobolev, A. M. Emel’yanov, E. I. Shek, and V. I. Vdovin, Phys. Solid State 46, 35 2004.
G. Davies, Phys. Rep. 176, 83 1989.
P. K. Giri, Semicond. Sci. Technol. 20, 638 2005.
Yu. Yang, J. Bao, C. Wang, and M. J. Aziz, J. Appl. Phys. 107, 123109 2010.
N. A. Sobolev, A. E. Kalyadin, E. I. Shek, V. I. Sakharov, I. T. Serenkov, V. I. Vdovin, E. O. Parshin, and M. I. Makoviichuk, Semiconductors 45, 1006 2011.
B. J. Coomer, J. P. Goss, R. Jones, S. Oberg, and R. Broddon, Physica B 273—274, 505 (1999).
S. Takeda, Jpn. J. Appl. Phys. 30, L639 (1991).
N. S. Minaev and A. V. Mudryi, Phys. Status Solidi A 68, 561 1981.
H. Przybylinska, W. Jantsch, Yu. Suprun-Belevitch, M. Stepikhova, L. Palmetshofer, G. Hendorfer, A. Kozanecki, R. J. Wilson, and B. J. Sealy, Phys. Rev. B 54, 2532 1996.
N. A. Sobolev, D. V. Denisov, A. M. Emel’yanov, E. I. Shek, and E. O. Parshin, Phys. Solid State 47, 113 2005.
Author information
Authors and Affiliations
Corresponding author
Additional information
Original Russian Text © N.A. Sobolev, K.F. Shtel’makh, A.E. Kalyadin, E.I. Shek, 2015, published in Fizika i Tekhnika Poluprovodnikov, 2015, Vol. 49, No. 12, pp. 1700–1703.
Rights and permissions
About this article
Cite this article
Sobolev, N.A., Shtel’makh, K.F., Kalyadin, A.E. et al. Temperature dependences of the photoluminescence intensities of centers in silicon implanted with erbium and oxygen ions. Semiconductors 49, 1651–1654 (2015). https://doi.org/10.1134/S1063782615120209
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1134/S1063782615120209