Selective UV radiation detection on the basis of low-dimensional ZnCdS/ZnMgS/GaP and ZnCdS/ZnS/GaP heterostructures S. V. AverinP. I. KuznetzovN. B. Gladisheva XIX Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 10–14, 2015 04 November 2015 Pages: 1393 - 1399
Study of multiple InAs/GaAs quantum-well structures by electroreflectance spectroscopy A. S. BolshakovV. V. ChaldyshevE. V. Nikitina XIX Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 10–14, 2015 04 November 2015 Pages: 1400 - 1404
Segregation of Sb in Ge epitaxial layers and its usage for the selective doping of Ge-based structures A. V. AntonovM. N. DrozdovD. V. Yurasov XIX Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 10–14, 2015 04 November 2015 Pages: 1405 - 1409
Excitation spectra of photoluminescence and its kinetics in structures with self-assembled Ge:Si nanoislands A. N. YablonskiyN. A. BaidakovaM. V. Shaleev XIX Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 10–14, 2015 04 November 2015 Pages: 1410 - 1414
Impact of growth and annealing conditions on the parameters of Ge/Si(001) relaxed layers grown by molecular beam epitaxy D. V. YurasovA. I. BobrovP. A. Yunin XIX Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 10–14, 2015 04 November 2015 Pages: 1415 - 1420
Si3N4 layers for the in-situ passivation of GaN-based HEMT structures P. A. YuninYu. N. DrozdovV. I. Shashkin XIX Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 10–14, 2015 04 November 2015 Pages: 1421 - 1424
Effect of transverse electric field and temperature on light absorption in GaAs/AlGaAs tunnel-coupled quantum wells D. A. FirsovL. E. VorobjevA. P. Vasil’iev XIX Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 10–14, 2015 04 November 2015 Pages: 1425 - 1429
Optical and magnetotransport properties of InGaAs/GaAsSb/GaAs structures doped with a magnetic impurity I. L. KalentyevaB. N. ZvonkovA. V. Zdoroveyshchev XIX Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 10–14, 2015 04 November 2015 Pages: 1430 - 1434
Temperature switching of cavity modes in InN microcrystals D. R. KazanovV. H. KaibyshevT. V. Shubina XIX Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 10–14, 2015 04 November 2015 Pages: 1435 - 1439
On a semiconductor laser with a p–n tunnel junction with radiation emission through the substrate D. A. KolpakovB. N. ZvonkovA. A. Dubinov XIX Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 10–14, 2015 04 November 2015 Pages: 1440 - 1442
Hodographs in diode-structure diagnostics V. B. ShmaginK. E. KudryavtsevZ. F. Krasilnik XIX Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 10–14, 2015 04 November 2015 Pages: 1443 - 1447
Circularly polarized electroluminescence of light-emitting InGaAs/GaAs (III, Mn)V diodes on the basis of structures with a tunneling barrier E. I. MalyshevaM. V. DorokhinA. V. Zdoroveishchev XIX Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 10–14, 2015 04 November 2015 Pages: 1448 - 1452
Tandem photovoltaic cells with a composite intermediate layer V. V. TravkinG. L. PakhomovP. A. Stuzhin XIX Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 10–14, 2015 04 November 2015 Pages: 1453 - 1458
On the radiation resistance of planar Gunn diodes with δ-doped layers E. S. ObolenskayaA. Yu. ChurinV. I. Shashkin XIX Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 10–14, 2015 04 November 2015 Pages: 1459 - 1467
Superradiant amplification of terahertz radiation by plasmons in inverted graphene with a planar distributed Bragg resonator O. V. PolischukV. V. PopovT. Otsuji XIX Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 10–14, 2015 04 November 2015 Pages: 1468 - 1472
Effect of self-organization, defects, impurities, and autocatalytic processes on the parameters of ZnO films and nanorods M. M. MezdroginaM. V. EremenkoN. V. Langusov Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 04 November 2015 Pages: 1473 - 1482
Temperature quenching of spontaneous emission in tunnel-injection nanostructures V. G. TalalaevB. V. NovikovH. S. Leipner Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 04 November 2015 Pages: 1483 - 1492
Study of the processes of degradation of the optical properties of mesoporous and macroporous silicon upon exposure to simulated solar radiation V. S. LevitskiiA. S. LenshinE. I. Terukov Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors 04 November 2015 Pages: 1493 - 1498
Spatial hole burning and spectral stability of a quantum-dot laser A. V. SavelyevV. V. KorenevA. E. Zhukov Physics of Semiconductor Devices 04 November 2015 Pages: 1499 - 1505
Comparative analysis of the effects of electron and hole capture on the power characteristics of a semiconductor quantum-well laser Z. N. SokolovaN. A. PikhtinL. V. Asryan Physics of Semiconductor Devices 04 November 2015 Pages: 1506 - 1510
Dynamic characteristics of 4H-SiC drift step recovery diodes P. A. IvanovO. I. Kon’kovI. V. Grekhov Physics of Semiconductor Devices 04 November 2015 Pages: 1511 - 1515
Effect of the design of the active region of monolithic multi-color LED heterostructures on their spectra and emission efficiency A. F. TsatsulnikovW. V. LundinS. Y. Karpov Physics of Semiconductor Devices 04 November 2015 Pages: 1516 - 1521
Design concepts of monolithic metamorphic vertical-cavity surface-emitting lasers for the 1300–1550 nm spectral range A. Yu. EgorovL. Ya. KarachinskyV. E. Bugrov Physics of Semiconductor Devices 04 November 2015 Pages: 1522 - 1526
Lasing of multiperiod quantum-cascade lasers in the spectral range of (5.6–5.8)-μm under current pumping A. Yu. EgorovA. V. BabichevI. S. Tarasov Physics of Semiconductor Devices 04 November 2015 Pages: 1527 - 1530
Dynamics of carrier recombination in a semiconductor laser structure R. I. DzhioevK. V. KavokinN. K. Poletaev Physics of Semiconductor Devices 04 November 2015 Pages: 1531 - 1535
