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Dynamic characteristics of 4H-SiC drift step recovery diodes

  • Physics of Semiconductor Devices
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Abstract

The dynamic characteristics of 4H-SiC p +–p–n 0–n + diodes are experimentally studied in the pulsed modes characteristic of the operation of drift step recovery diodes (DSRD-mode). The effect of the subnanosecond termination of the reverse current maintained by electron-hole plasma preliminarily pumped by a forward current pulse is analyzed in detail. The influence exerted on the DSRD effect by the amplitude of reverse-voltage pulses, the amplitude and duration of forward-current pulses, and the time delay between the forward and reverse pulses is demonstrated and accounted for.

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Authors and Affiliations

  1. Ioffe Physical–Technical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia

    P. A. Ivanov, O. I. Kon’kov, T. P. Samsonova, A. S. Potapov & I. V. Grekhov

Authors
  1. P. A. Ivanov
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  2. O. I. Kon’kov
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  3. T. P. Samsonova
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  4. A. S. Potapov
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  5. I. V. Grekhov
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Corresponding author

Correspondence to P. A. Ivanov.

Additional information

Original Russian Text © P.A. Ivanov, O.I. Kon’kov, T.P. Samsonova, A.S. Potapov, I.V. Grekhov, 2015, published in Fizika i Tekhnika Poluprovodnikov, 2015, Vol. 49, No. 11, pp. 1558–1562.

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Ivanov, P.A., Kon’kov, O.I., Samsonova, T.P. et al. Dynamic characteristics of 4H-SiC drift step recovery diodes. Semiconductors 49, 1511–1515 (2015). https://doi.org/10.1134/S1063782615110093

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  • DOI: https://doi.org/10.1134/S1063782615110093

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