1. Pyroelectric properties of the wide-gap CdSe semiconductor in the low-temperature region

   • Yu. V. Shaldin
   • S. Matyiasik
   • N. V. Zhavoronkov

   Electronic Properties of Semiconductors 05 January 2014 Pages: 1 - 8

2. On the application of methods of positron annihilation spectroscopy for studying radiation-stimulated processes in chalcogenide glassy semiconductors

   • T. S. Kavetskyy
   • V. M. Tsmots
   • A. L. Stepanov

   Electronic Properties of Semiconductors 05 January 2014 Pages: 9 - 12

3. Nonlinear ionization of a two-dimensional nanostructure

   • P. A. Eminov
   • V. V. Sokolov
   • S. V. Gordeeva

   Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 05 January 2014 Pages: 13 - 20

4. Structure and optical properties of heterostructures based on MOCVD (Al _x Ga_{1 − x} As_{1 − y} P _y )_{1 − z} Si _z alloys

   • Alloys P. V. Seredin
   • A. V. Glotov
   • Monica Rinke

   Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 05 January 2014 Pages: 21 - 29

5. Transport parameters and optical properties of selectively doped Ga(Al)As/Zn(Mn)Se heterovalent structures with a two-dimensional hole channel

   • E. A. Evropeytsev
   • G. V. Klimko
   • A. A. Toropov

   Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 05 January 2014 Pages: 30 - 33

6. Molecular beam epitaxy of AlGaAs/Zn(Mn)Se hybrid nanostructures with InAs/AlGaAs quantum dots near the heterovalent interface

   • G. V. Klimko
   • S. V. Sorokin
   • S. V. Ivanov

   Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 05 January 2014 Pages: 34 - 41

7. Annealing-induced evolution of the structural and morphological properties of a multilayer nanoperiodic SiO _x /ZrO₂ system containing Si nanoclusters

   • A. V. Ershov
   • D. A. Pavlov
   • D. I. Tetelbaum

   Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 05 January 2014 Pages: 42 - 45

8. Energy gaps in the density of states of a graphene buffer layer on silicon carbide: Consideration for the irregularity of layer-substrate coupling

   • S. Yu. Davydov

   Carbon Systems 05 January 2014 Pages: 46 - 52

9. Dependence of the efficiency of III-N blue LEDs on the structural perfection of GaN epitaxial buffer layers

   • W. V. Lundin
   • A. E. Nikolaev
   • A. F. Tsatsulnikov

   Physics of Semiconductor Devices 05 January 2014 Pages: 53 - 57

10. Optimization of the deposition technique of thin ITO films used as transparent conducting contacts for blue and near-UV LEDs

    • I. P. Smirnova
    • L. K. Markov
    • S. I. Pavlov

    Physics of Semiconductor Devices 05 January 2014 Pages: 58 - 62

11. Effect of GaAs (100) substrate misorientation on the electrical parameters and surface morphology of metamorphic In_0.7Al_0.3As/In_0.75Ga_0.25As/In_0.7Al_0.3As HEMT nanoheterostructures

    • G. B. Galiev
    • S. S. Pushkarev
    • P. P. Maltsev

    Physics of Semiconductor Devices 05 January 2014 Pages: 63 - 68

12. MHEMT with a power-gain cut-off frequency of f _max = 0.63 THz on the basis of a In_0.42Al_0.58As/In_0.42Ga_0.58As/In_0.42Al_0.58As/GaAs nanoheterostructure

    • D. V. Lavrukhin
    • A. E. Yachmenev
    • P. P. Maltsev

    Physics of Semiconductor Devices 05 January 2014 Pages: 69 - 72

13. Effect of tin on the processes of silicon-nanocrystal formation in amorphous SiO _x thin-film matrices

    • V. V. Voitovych
    • R. M. Rudenko
    • V. A. Makara

    Fabrication, Treatment, and Testing of Materials and Structures 05 January 2014 Pages: 73 - 76

14. Degradation-robust 850-nm vertical-cavity surface-emitting lasers for 25Gb/s optical data transmission

    • S. A. Blokhin
    • L. Ya. Karachinsky
    • D. Bimberg

    Materials of the 3rd Symposium “Semiconductor Lasers: Physics and Technology” (St. Petersburg, October 13–16, 2012) 05 January 2014 Pages: 77 - 82

15. Current-injection efficiency in semiconductor lasers with a waveguide based on quantum wells

    • A. A. Afonenko
    • D. V. Ushakov

    Materials of the 3rd Symposium “Semiconductor Lasers: Physics and Technology” (St. Petersburg, October 13–16, 2012) 05 January 2014 Pages: 83 - 88

16. Efficiency of vertical emission from a semiconductor laser waveguide with a diffraction grating

    • A. A. Afonenko
    • V. Ya. Aleshkin
    • A. A. Dubinov

    Materials of the 3rd Symposium “Semiconductor Lasers: Physics and Technology” (St. Petersburg, October 13–16, 2012) 05 January 2014 Pages: 89 - 94

17. High-power pulse-emitting lasers in the 1.5–1.6 μm spectral region

    • P. V. Gorlachuk
    • Yu. L. Ryaboshtan
    • V. A. Simakov

    Materials of the 3rd Symposium “Semiconductor Lasers: Physics and Technology” (St. Petersburg, October 13–16, 2012) 05 January 2014 Pages: 95 - 98

18. Laser-diode arrays based on epitaxial integrated heterostructures with increased power and brightness of the pulse emission

    • V. P. Konyaev
    • A. A. Marmalyuk
    • V. A. Simakov

    Materials of the 3rd Symposium “Semiconductor Lasers: Physics and Technology” (St. Petersburg, October 13–16, 2012) 05 January 2014 Pages: 99 - 103

19. Investigation of the restoration effect of the radiative parameters of high-power laser diodes based on GaAsP/AlGaAs/GaAs strained heterostructures at a wavelength of 808 nm

    • V. V. Bezotosnyi
    • V. A. Oleshenko
    • E. A. Cheshev

    Materials of the 3rd Symposium “Semiconductor Lasers: Physics and Technology” (St. Petersburg, October 13–16, 2012) 05 January 2014 Pages: 104 - 108

20. Limiting parameters of high-power single-stripe laser diodes in the range of 800–808 nm in the pulsed mode

    • V. V. Bezotosnyi
    • V. Yu. Bondarev
    • E. A. Cheshev

    Materials of the 3rd Symposium “Semiconductor Lasers: Physics and Technology” (St. Petersburg, October 13–16, 2012) 05 January 2014 Pages: 109 - 114

21. Laser emitters (λ = 808 nm) based on AlGaAs/GaAs heterostructures

    • A. A. Marmalyuk
    • A. Yu. Andreev
    • I. V. Yarotskaya

    Materials of the 3rd Symposium “Semiconductor Lasers: Physics and Technology” (St. Petersburg, October 13–16, 2012) 05 January 2014 Pages: 115 - 119

22. Single-frequency tunable semiconductor lasers

    • V. P. Duraev
    • S. V. Medvedev

    Materials of the 3rd Symposium “Semiconductor Lasers: Physics and Technology” (St. Petersburg, October 13–16, 2012) 05 January 2014 Pages: 120 - 122

23. Application of diode lasers in light-oxygen cancer therapy

    • S. D. Zakharov
    • I. M. Korochkin
    • F. Frantzen

    Materials of the 3rd Symposium “semiconductor Lasers: Physics and Technology” (St. Petersburg, October 13–16, 2012) 05 January 2014 Pages: 123 - 128

24. Optical-fiber-tip temperature control system for fiber-coupled laser modules in medical equipment

    • S. E. Aleksandrov
    • G. A. Gavrilov
    • A. L. Ter-Martirosyan

    Materials of the 3rd Symposium “semiconductor Lasers: Physics and Technology” (St. Petersburg, October 13–16, 2012) 05 January 2014 Pages: 129 - 134