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MHEMT with a power-gain cut-off frequency of f max = 0.63 THz on the basis of a In0.42Al0.58As/In0.42Ga0.58As/In0.42Al0.58As/GaAs nanoheterostructure

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Abstract

The method of molecular-beam epitaxy is used to grow a In0.42Al0.58As/In0.42Ga0.58As/In0.42Al0.58As nanoheterostructure with a step-graded metamorphic buffer on a GaAs substrate. The root-mean-square value of the surface roughness is 3.1 nm. A MHEMT (metamorphic high-electron-mobility transistor) with a zigzag-like gate of a length of 46 nm is fabricated on the basis of this nanoheterostructure; for this MHEMT, the cutoff frequencies for the current and power gain are f T = 0.13 THz and f max = 0.63 THz, respectively.

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Authors and Affiliations

  1. Institute of Ultrahigh-Frequency Semiconductor Electronics, Russian Academy of Sciences, Moscow, 117105, Russia

    D. V. Lavrukhin, A. E. Yachmenev, R. R. Galiev, R. A. Khabibullin, D. S. Ponomarev, Yu. V. Fedorov & P. P. Maltsev

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  1. D. V. Lavrukhin
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  2. A. E. Yachmenev
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  3. R. R. Galiev
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  4. R. A. Khabibullin
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  5. D. S. Ponomarev
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  6. Yu. V. Fedorov
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  7. P. P. Maltsev
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Correspondence to D. V. Lavrukhin.

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Original Russian Text © D.V. Lavrukhin, A.E. Yachmenev, R.R. Galiev, R.A. Khabibullin, D.S. Ponomarev, Yu.V. Fedorov, P.P. Maltsev, 2014, published in Fizika i Tekhnika Poluprovodnikov, 2014, Vol. 48, No. 1, pp. 73–76.

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Lavrukhin, D.V., Yachmenev, A.E., Galiev, R.R. et al. MHEMT with a power-gain cut-off frequency of f max = 0.63 THz on the basis of a In0.42Al0.58As/In0.42Ga0.58As/In0.42Al0.58As/GaAs nanoheterostructure. Semiconductors 48, 69–72 (2014). https://doi.org/10.1134/S1063782614010187

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  • DOI: https://doi.org/10.1134/S1063782614010187

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