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Optimization of the deposition technique of thin ITO films used as transparent conducting contacts for blue and near-UV LEDs

  • Physics of Semiconductor Devices
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Abstract

Structural, optical, and electrical properties of indium-tin oxide (ITO) films produced by electron-beam evaporation, magnetron sputtering, and a combined method are studied. It is demonstrated that, despite the high transparency of the electron-beam-deposited ITO films in the visible spectral range, their conductivity and refractive index are noticeably lower than the respective parameters of ITO films deposited by magnetron sputtering. A technique for the fabrication of double-layer systems by the combination of these two deposition techniques is developed. As a result, we obtained the films, which possess the advantages of magnetron-sputtered layers and can be used as contact layers to p-type GaN in LEDs for the blue and nearultraviolet (near-UV) spectral ranges.

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Authors and Affiliations

  1. Ioffe Physical-Technical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia

    I. P. Smirnova, L. K. Markov, A. S. Pavlyuchenko & S. I. Pavlov

  2. Scientific and Technological Center for Microelectronics and Submicron Heterostructures, Russian Academy of Sciences, St. Petersburg, 194021, Russia

    I. P. Smirnova, L. K. Markov, A. S. Pavlyuchenko & M. V. Kukushkin

  3. TETIS Innovation Company ZAO, St. Petersburg, 194156, Russia

    M. V. Kukushkin

Authors
  1. I. P. Smirnova
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  2. L. K. Markov
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  3. A. S. Pavlyuchenko
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  4. M. V. Kukushkin
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  5. S. I. Pavlov
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Correspondence to I. P. Smirnova.

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Original Russian Text © I.P. Smirnova, L.K. Markov, A.S. Pavlyuchenko, M.V. Kukushkin, S.I. Pavlov, 2014, published in Fizika i Tekhnika Poluprovodnikov, 2014, Vol. 48, No. 1, pp. 61–66.

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Smirnova, I.P., Markov, L.K., Pavlyuchenko, A.S. et al. Optimization of the deposition technique of thin ITO films used as transparent conducting contacts for blue and near-UV LEDs. Semiconductors 48, 58–62 (2014). https://doi.org/10.1134/S1063782614010230

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  • DOI: https://doi.org/10.1134/S1063782614010230

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