1. Microdeformations of the crystal lattice of PbTe_{1 − x} Br _x solid solutions

   • M. K. Sharov
   • K. A. Kabanova

   Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) 06 November 2014 Pages: 1405 - 1407

2. Methods for estimating the compensating-impurity concentration in Hg-doped Ge

   • V. F. Bannaya

   Electronic Properties of Semiconductors 06 November 2014 Pages: 1408 - 1410

3. A DFT study of BeX (X = S, Se, Te) semiconductor: Modified Becke Johnson (mBJ) potential

   • D. P. Rai
   • M. P. Ghimire
   • R. K. Thapa

   Electronic Properties of Semiconductors 06 November 2014 Pages: 1411 - 1422

4. Hysteretic phenomena in a 2DEG in the quantum Hall effect regime, studied in a transport experiment

   • M. V. Budantsev
   • D. A. Pokhabov
   • A. I. Toropov

   Electronic Properties of Semiconductors 06 November 2014 Pages: 1423 - 1431

5. Hall effect in CdTe crystals doped with Sn from the vapor phase

   • V. P. Makhniy
   • I. I. German
   • O. A. Parfenyuk

   Electronic Properties of Semiconductors 06 November 2014 Pages: 1432 - 1433

6. Physical properties of FeGa₂Se₄ under an applied alternating current

   • N. N. Niftiev
   • O. B. Tagiev
   • F. M. Mamedov

   Electronic Properties of Semiconductors 06 November 2014 Pages: 1434 - 1437

7. Vacancy-donor pairs and their formation in irradiated n-Si

   • V. V. Emtsev
   • N. V. Abrosimov
   • G. A. Oganesyan

   Electronic Properties of Semiconductors 06 November 2014 Pages: 1438 - 1443

8. Study of the vibrational states of CdTe and CdHgTe lattices under conditions of the adsorption of ammonia and carbon dioxide

   • O. A. Fedyaeva

   Spectroscopy, Interaction with Radiation 06 November 2014 Pages: 1444 - 1448

9. Electron diffraction study of the phase formation of Tl-Fe-Se and kinetics of phase transformations of films TlFeSe₂

   • E. B. Asgerov
   • A. I. Madadzada
   • R. N. Mehdiyeva

   Surfaces, Interfaces, and Thin Films 06 November 2014 Pages: 1449 - 1451

10. Multilayer quantum-dot arrays of high bulk density

    • A. M. Nadtochiy
    • A. S. Payusov
    • O. I. Simchuk

    Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 06 November 2014 Pages: 1452 - 1455

11. Formation and annealing of metastable (interstitial oxygen)-(interstitial carbon) complexes in n- and p-type silicon

    • L. F. Makarenko
    • F. P. Korshunov
    • I. Pintilie

    Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 06 November 2014 Pages: 1456 - 1462

12. Investigation of GaAs/AlGaAs quantum cascade structures by optical methods based on hot luminescence in the near-infrared range

    • K. V. Maremyanin
    • D. I. Kryzhkov
    • Yu. G. Sadof’ev

    Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 06 November 2014 Pages: 1463 - 1466

13. Electrically-detected electron paramagnetic resonance of point centers in 6H-SiC nanostructures

    • N. T. Bagraev
    • D. S. Gets
    • B. D. Shanina

    Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 06 November 2014 Pages: 1467 - 1480

14. Sensitization of the photoelectric effect in carbazole- and indolocarbazole-containing poly(phenylquinoline)s by benzothiadiazole acceptor molecules

    • E. L. Aleksandrova
    • V. M. Svetlichnyi
    • A. R. Tameev

    Amorphous, Vitreous, and Organic Semiconductors 06 November 2014 Pages: 1481 - 1484

15. Functionalization of nc-Si/SiO₂ semiconductor quantum dots by oligonucleotides

    • F. B. Bayramov
    • E. D. Poloskin
    • B. H. Bairamov

    Amorphous, Vitreous, and Organic Semiconductors 06 November 2014 Pages: 1485 - 1489

16. On the applicability boundaries of the restoration method for the temporal shape of modulated optical signals with a frequency higher than the boundary frequency of a photoresistor

    • E. V. Nikishin

    Physics of Semiconductor Devices 06 November 2014 Pages: 1490 - 1493

17. Features of the current-voltage characteristics in thin conductive layers of organic light-emitting diodes

    • V. R. Nikitenko
    • N. A. Sannikova
    • M. N. Strikhanov

    Physics of Semiconductor Devices 06 November 2014 Pages: 1494 - 1498

18. Gas-sensitive layers based on fractal-percolation structures

    • V. A. Moshnikov
    • S. S. Nalimova
    • B. I. Seleznev

    Physics of Semiconductor Devices 06 November 2014 Pages: 1499 - 1503

19. Specific features of the recombination loss of the photocurrent in n-TiN/p-Si anisotype heterojunctions

    • M. N. Solovan
    • V. V. Brus
    • P. D. Maryanchuk

    Physics of Semiconductor Devices 06 November 2014 Pages: 1504 - 1506

20. Planar microcavity containing luminescent diamond particles with embedded silicon-vacancy color centers in its active layer

    • S. A. Grudinkin
    • N. A. Feoktistov
    • V. G. Golubev

    Physics of Semiconductor Devices 06 November 2014 Pages: 1507 - 1511

21. Biosensors based on a method for determining the conductance matrix of multiterminal semiconductor nanostructures

    • E. Yu. Danilovskii
    • N. T. Bagraev
    • A. M. Malyarenko

    Physics of Semiconductor Devices 06 November 2014 Pages: 1512 - 1517

22. Spectral features of the photoresponse of structures with silicon nanoparticles

    • O. S. Ken
    • D. A. Andronikov
    • S. A. Gurevich

    Physics of Semiconductor Devices 06 November 2014 Pages: 1518 - 1524

23. Phase formation upon the interaction of thin films in the system Yb_{1 − x} Sm _x Te-As₂Te₃

    • E. Sh. Hajiyev

    Fabrication, Treatment, and Testing of Materials and Structures 06 November 2014 Pages: 1525 - 1526

24. Structure and optical properties of thin Al₂O₃ films deposited by the reactive ion-plasma sputtering method on GaAs (100) substrates

    • P. V. Seredin
    • D. L. Goloschapov
    • I. S. Tarasov

    Fabrication, Treatment, and Testing of Materials and Structures 06 November 2014 Pages: 1527 - 1531

25. Dependence of the AlN-Layer growth rate on source-substrate clearance for the sublimation growth method

    • A. A. Wolfson

    Fabrication, Treatment, and Testing of Materials and Structures 06 November 2014 Pages: 1532 - 1534

26. Specific features of the hydride vapor-phase epitaxy of nitride materials on a silicon substrate

    • M. G. Mynbaeva
    • A. A. Golovatenko
    • V. I. Nikolaev

    Fabrication, Treatment, and Testing of Materials and Structures 06 November 2014 Pages: 1535 - 1538

27. Effect of local structural defects on the precipitation of as in the vicinity of InAs quantum dots in a GaAs matrix

    • V. N. Nevedomskiy
    • N. A. Bert
    • B. R. Semyagin

    Fabrication, Treatment, and Testing of Materials and Structures 06 November 2014 Pages: 1539 - 1543