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Physical properties of FeGa2Se4 under an applied alternating current

  • Electronic Properties of Semiconductors
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Abstract

The temperature and frequency dependences of the permittivity and conductivity of FeGa2Se4 crystals under an applied alternating current are investigated. The values of the permittivity are determined. It is assumed that an increase in ɛ′ is related to an increase in the defect concentration with temperature. It is established that the regularity σ ∝ f S (0.1 ≤ S ≤ 1.0) is fulfilled for conductivity in the temperature range of 294–374 K at frequencies of 104-2 × 105 Hz. In the FeGa2Se4 crystal, the variation in the frequency dependence of the conductivity can be explained as follows: there are the clusters in crystals containing localized states with almost identical energy, and the electron hopping occurs between them. In the FeGa2Se4 compound, the conductivity is characterized by band-hopping mechanisms.

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Authors and Affiliations

  1. Azerbaijan State Pedagogical University, Baku, Az-1000, Azerbaijan

    N. N. Niftiev

  2. Institute of Physics, National Academy of Sciences of Azerbaijan, Baku, Az-1143, Azerbaijan

    O. B. Tagiev

  3. Baku State University, Baku, Az-1148, Azerbaijan

    M. B. Muradov

  4. Institute of Problems of Chemistry, National Academy of Sciences of Azerbaijan, Baku, Az-1143, Azerbaijan

    F. M. Mamedov

Authors
  1. N. N. Niftiev
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  2. O. B. Tagiev
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  3. M. B. Muradov
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  4. F. M. Mamedov
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Correspondence to N. N. Niftiev.

Additional information

Original Russian Text © N.N. Niftiev, O.B. Tagiev, M.B. Muradov, F.M. Mamedov, 2014, published in Fizika i Tekhnika Poluprovodnikov, 2014, Vol. 48, No. 11, pp. 1469–1472.

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Niftiev, N.N., Tagiev, O.B., Muradov, M.B. et al. Physical properties of FeGa2Se4 under an applied alternating current. Semiconductors 48, 1434–1437 (2014). https://doi.org/10.1134/S1063782614110219

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  • DOI: https://doi.org/10.1134/S1063782614110219

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